BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSC123N08NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.21 | $12.10 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.83 | $830.00 |
| 5,000 | $0.71 | $3,550.00 |
Drop-in alternatives for BSC123N08NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSZ123N08NS3GATMA1
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BSC052N08NS5ATMA1
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View Datasheet →BSC0906NSATMA1
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View Datasheet →BSC077N12NS3GATMA1
✅ Drop-In✓ In Stock
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View Datasheet →BSC047N08NS3GATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →NTMFS4935NT1G
✅ Drop-In📋 Reference alternative (not in catalog)
SiR870DP
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BSC123N08NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 3 |
| Channel Type | N-Channel |
| Configuration | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | 11 A |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | ±20 V |
| Power Dissipation (Tc) | 66 W |
| Power Dissipation (Ta) | 2.5 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant with exemption |
| Automotive Qualified | Yes (AEC-Q101) |
BSC123N08NS3GATMA1 Pin Configuration
| Pin 1 | Source — Source (connected to GND on low-side; pins 1-3 are tied together for lowest source-inductance) |
| Pin 2 | Source — Source (tied to pin 1 and pin 3 internally and on the PCB) |
| Pin 3 | Source — Source (tied to pin 1 and pin 2) |
| Pin 4 | Gate — Gate drive input (10 V nominal; ±20 V max VGS) |
| Pin 5 | Drain — Drain (pins 5-8 are tied together and form the thermal pad) |
| Pin 6 | Drain — Drain (thermal pad - expose on PCB for heat dissipation) |
| Pin 7 | Drain — Drain (thermal pad) |
| Pin 8 | Drain — Drain (thermal pad) |
Safe Operating Area - DC continuous
Typical Applications
BSC123N08NS3GATMA1 is suitable for 6 applications: 48 V Synchronous Rectifier, 48 V Hot-Swap / OR-ing Switch, Industrial 24-48 V Motor Drive Half-Bridge, Solar Micro-Inverter Primary-Side Switch, Telecom 48 V eFuse / Battery Protection FET, USB-PD EPR High-Current Switch.
48 V Synchronous Rectifier
The BSC123N08NS3GATMA1 is used as the low-side synchronous rectifier FET in 48 V buck and half-bridge converters for telecom and server point-of-load applications. With 12.3 mOhm RDS(on) at VGS=10 V and 80 V VDS rating, it comfortably handles 48 V nominal rails plus 60 V transient spikes per ETSI EN 300 132-2. The OptiMOS 3 platform's low Qgd (~6 nC typical) keeps dead-time losses small at 200-500 kHz switching frequencies. Compared with a Schottky-diode rectifier, the synchronous-FET topology recovers 2-4% efficiency and eliminates reverse-recovery charge.
Recommended
48 V Hot-Swap / OR-ing Switch
In 48 V distribution backplanes, BSC123N08NS3GATMA1 acts as the OR-ing or hot-swap protection FET, taking advantage of its 80 V VDS margin and 55 A continuous current rating. The 12.3 mOhm RDS(on) at full VGS=10 V drive keeps conduction loss around 7 W at 24 A (P=I^2*R), which a 1 sq-in PCB copper area can dissipate with thermal vias to the inner plane. Its AEC-Q101 qualification makes it suitable for both telecom shelves and 48 V mild-hybrid automotive eFuse loops.
Recommended
Industrial 24-48 V Motor Drive Half-Bridge
BSC123N08NS3GATMA1 serves as the low-side switch in industrial 24-48 V brushless DC (BLDC) motor drives, where its 80 V VDS rating absorbs the L*di/dt overshoot of the motor winding inductance during commutation. The 55 A continuous drain current supports drives up to ~2 kW without paralleling FETs. The OptiMOS 3 cell's avalanche rating handles the regenerative braking energy dump back into the DC bus through the body diode. Designers should still use gate-source resistors of 10-47 ohm to dampen ringing on the long motor-cable harness.
Recommended
Solar Micro-Inverter Primary-Side Switch
In solar micro-inverter and string-inverter primary stages, BSC123N08NS3GATMA1 is used as the primary-side switch of a flyback or HF-isolated forward converter on 40-60 V PV input rails. The 80 V VDS rating tolerates the leakage-inductance spike of the HF transformer with adequate snubber margin. The low Qoss of OptiMOS 3 reduces the primary-side switching loss at 50-100 kHz, critical for CEC-weighted efficiency. AEC-Q101 qualification also supports mobile solar and vehicle-integrated PV (VIPV) applications.
Recommended
Telecom 48 V eFuse / Battery Protection FET
BSC123N08NS3GATMA1 is well-suited as the protection FET in 48 V lithium-ion battery packs and telecom eFuse modules, where its 80 V VDS margin covers 48 V nominal plus full-charge transients to 54.6 V and inductive kick from hot-plug events. The 12.3 mOhm RDS(on) keeps continuous conduction loss low during normal discharge (≈10 W at 30 A). AEC-Q101 qualification and -55C to +150C junction temperature range meet outdoor telecom and mild-hybrid automotive battery-pack requirements.
Recommended
USB-PD EPR High-Current Switch
BSC123N08NS3GATMA1 can serve as the high-current protection switch in USB-PD Extended Power Range (EPR) hubs operating at 28 V / 36 V / 48 V nominal rails up to 240 W. The 80 V VDS rating easily covers the 48 V EPR highest fixed PDO plus cable-transient overshoots, while the 12.3 mOhm RDS(on) limits full-load voltage drop to ~0.5 V at 5 A. Its SuperSO8 footprint is well-suited to the dense PCBs of modern docking stations and multi-port chargers.
Recommended
Recommended Products Summary
Engineering reference data for BSC123N08NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ123N08NS3GATMA1 | BSC052N08NS5ATMA1 | BSC0906NSATMA1 | BSC077N12NS3GATMA1 | BSC047N08NS3GATMA1 | NTMFS4935NT1G | SiR870DP |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8 (5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | SO-8 FL (5x6) - pin-compatible | PowerPAK SO-8 (5x6) - pin-compatible |
| VDS max (V) | 80 | 80 | 80 | 60 | 120 | 80 | 80 | 80 |
| RDS(on) max @ VGS=10V (mOhm) | 12.3 | 12.3 | 5.2 | 9.0 | 7.7 | 4.7 | 10.0 (typ) | 11.0 (typ) |
| Continuous ID @ Tc=25C (A) | 55 | 55 | 100 | 60 | 80 | 100 | 60 (typ) | 60 (typ) |
| Power Dissipation Tc=25C (W) | 66 | 66 | 78 | 69 | 83 | 83 | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | ON Semi N-channel | Vishay TrenchFET |
| Automotive (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes | Yes | No |
Key Differentiators
- 12.3 mOhm RDS(on) in the smallest 80 V SuperSO8 footprint (vs BSC0906NSATMA1 (60 V, 9 mOhm))
- OptiMOS 3 cost-optimized for high-volume 80 V designs (vs BSC052N08NS5ATMA1 (OptiMOS 5, 5.2 mOhm))
- Pin-compatible second-source from ON Semi and Vishay (vs NTMFS4935NT1G (onsemi) and SiR870DP (Vishay))
Design Notes
Estimated: At VIN=48 V, ID=20 A continuous on a 1 sq-in 2 oz FR4 PCB copper pour, power dissipation is P=I^2*RDS(on) ≈ 20^2 × 0.012 = 4.8 W. SuperSO8 with a 1 sq-in copper pad typically achieves theta_JA ≈ 50 C/W, giving a junction temperature rise of about 240C above ambient - insufficient margin. Add top-side thermal vias (0.3 mm pitch, 12+ vias) to the inner plane and at least 2 sq-in of copper, then theta_JA drops to ~30 C/W and the junction rises 144C, which is acceptable at 25C ambient. For continuous 30 A operation a forced-air or heatsink is mandatory.
Place the gate drive resistor (10-47 ohm) within 5 mm of pin 4 to minimize gate-loop inductance and ringing. Source pins 1-3 must all be soldered and tied to a low-impedance ground plane via a stitched via array. Drain pins 5-8 form the thermal pad - use an array of 0.3 mm thermal vias on 1.0 mm pitch to a 2 oz inner plane. Recommended land pattern follows the IPC-7351 SO-8 PowerPAD family; use the manufacturer's land pattern in the datasheet, not the standard SO-8 footprint.
Do not exceed ±20 V VGS - gate-oxide rupture is permanent. Always include a 10 kohm gate-source pull-down resistor to keep the FET off during controller power-up; without it the gate can float into the linear region and self-heat. The body diode has modest reverse-recovery performance - for hard-switched bridge topologies add external anti-parallel Schottky diodes or use a part from the OptiMOS 5 family. Never operate above 80 V VDS even for microseconds; transient suppression (TVS, snubber) is required when switching inductive loads.
Keep the switching-node (drain) loop area below 0.5 cm^2 to limit parasitic inductance that overshoots during turn-off. Route the gate drive on the opposite PCB layer from the drain node to minimize capacitive coupling (Miller injection). For paralleled FETs add individual gate-source resistors to suppress parasitic oscillations above 5 MHz - paralleling without per-FET gate damping is a common cause of sub-cycle shoot-through in half-bridge designs.
Compliance Information
AEC-Q101 qualified (automotive MOSFET stress-test standard). RoHS compliant with the high-melting-point lead exemption (exemption 7a under 2011/65/EU) typically applied to the die-attach solder. SVHC declared above threshold per Arrow's product declaration (likely related to the lead exemption).
