Infineon

IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon

MPN: IAUZ40N06S5L050ATMA1 ✓ Active
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60 V Vdss [DATA_NEEDED: continuous drain current at Tc=25C] Id PG-TSDSON-8-33 (TSDSON-8) Package
From $0.71 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.34 $1.34
10 $1.2 $12.00
100 $1.05 $105.00
500 $0.92 $460.00
1,000 $0.82 $820.00
3,000 $0.71 $2,130.00
ℹ️ All prices are in USD

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IAUZ40N06S5L050ATMA1 Maximum Ratings & Electrical Characteristics

Polarity N-Channel
Drain-Source Voltage (V<sub>DS</sub>) 60 V
Drain Current at T<sub>j</sub> 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W
Operating Junction Temperature -55 °C to +175 °C
Package PG-TSDSON-8-33 (TSDSON-8)
Mounting Type Surface Mount
Technology OptiMOS 5 (super-junction N-channel)
Automotive Qualification AEC-Q100 qualified
RoHS Status Compliant

IAUZ40N06S5L050ATMA1 Pin Configuration

DFN-8 Package Pinout Diagram DFN-8 2x2mm, P0.5mm, EP 0.9x1.7mm, JEDEC MO-229. 1 8 2 7 3 6 4 5 DFN-8
Pin 1 Source — Source connection (pin 1 of 8)
Pin 2 Source — Source connection (pin 2 of 8)
Pin 3 Source — Source connection (pin 3 of 8)
Pin 4 Gate — Gate drive input
Pin 5 Drain — Drain connection (pin 5 of 8)
Pin 6 Drain — Drain connection (pin 6 of 8)
Pin 7 Drain — Drain connection (pin 7 of 8)
Pin 8 Drain — Drain connection (pin 8 of 8)

Safe Operating Area (DC)

DC Continuous Operation

Typical Applications

IAUZ40N06S5L050ATMA1 is suitable for 6 applications: 12V Automotive DC-DC Buck Converter, Automotive LED Headlight Driver, 48V Mild-Hybrid DC-DC Converter, Battery Management System (BMS) Protection, ADAS Sensor Power Supply, E-Mobility Motor Drive Auxiliary Stage.

🚗

12V Automotive DC-DC Buck Converter

The IAUZ40N06S5L050ATMA1 fits as the synchronous rectifier (low-side) in 12 V input buck converters for automotive infotainment, ADAS ECUs, and body controllers. With 5 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> and 28.2 nC Q<sub>G</sub>, it minimizes both conduction loss (P=I²R ≈ 0.45 W at 30 A continuous) and switching loss at 100-300 kHz operating frequency. The 60 V V<sub>DS</sub> rating provides ≥25 V margin above 12 V battery + load-dump transients (35 V peak per ISO 7637-2). The PG-TSDSON-8-33 footprint enables converter designs under 25 mm² total footprint, critical for distributed ECU placement.

💡

Automotive LED Headlight Driver

The IAUZ40N06S5L050ATMA1 functions as the main switching FET or synchronous rectifier in automotive LED headlight boost/buck driver topologies. Its 90 A continuous drain current supports high-brightness LED arrays up to 30 A load without paralleling devices. The 60 V V<sub>DS</sub> rating gives margin against automotive transient events, and the AEC-Q100 qualification is mandatory for headlamp applications. The PG-TSDSON-8-33 thermal pad enables direct PCB heat-sinking, allowing compact headlamp module designs with junction temperature staying below 150 °C even at 8-12 W continuous dissipation.

🏭

48V Mild-Hybrid DC-DC Converter

The IAUZ40N06S5L050ATMA1 can be used in 48 V mild-hybrid systems where V<sub>DS</sub> transients are controlled below 60 V by the converter topology. For example, in a 48 V to 12 V buck converter operating at 200 kHz, the IAUZ40N06S5L050ATMA1's low R<sub>DS(on)</sub>×Q<sub>G</sub> figure-of-merit enables >97% peak efficiency at 20 A load. For designs where 48 V battery transients could exceed 60 V, consider the higher-voltage IPB020N10N5ATMA1 from the XAIPART catalog as a same-footprint alternative with 100 V rating.

🔋

Battery Management System (BMS) Protection

In BMS protection circuits, the IAUZ40N06S5L050ATMA1 serves as a high-current disconnect switch for 12 V/48 V battery modules. Its 90 A continuous current rating handles peak discharge currents during engine cranking or regenerative braking events. The 60 V V<sub>DS</sub> rating accommodates 48 V nominal plus inductive transients when switching off inductive loads. The PG-TSDSON-8-33 package allows bidirectional current flow when wired in back-to-back configuration for high-side + low-side disconnect topologies used in master-slave BMS architectures.

🎥

ADAS Sensor Power Supply

The IAUZ40N06S5L050ATMA1 powers ADAS sensor rails (camera, radar, lidar) where high-current bursts occur during sensor activation and post-processing. The 5 mΩ R<sub>DS(on)</sub> minimizes voltage droop during 5-10 A load steps from radar MMIC activation. The AEC-Q100 qualification is required for ISO 26262 functional-safety rated ADAS subsystems. The low Q<sub>G</sub> of 28.2 nC allows the device to be driven directly from logic-level GPIO on small microcontrollers without a dedicated gate driver, simplifying ADAS sensor PCB designs.

✈️

E-Mobility Motor Drive Auxiliary Stage

The IAUZ40N06S5L050ATMA1 serves in auxiliary power stages for e-mobility traction systems - specifically the 12 V auxiliary buck converters that power vehicle accessories from the high-voltage traction battery. With 5 mΩ R<sub>DS(on)</sub> and 71 W power dissipation rating, it handles the auxiliary load transients (up to 40 A peaks during seat/window motor activation). The -55 °C to +175 °C junction temperature range ensures operation across automotive underhood thermal extremes. PG-TSDSON-8-33 footprint enables direct PCB-mount thermal management without heatsinks.

What is the maximum drain-source voltage (VDS) of IAUZ40N06S5L050ATMA1?
The IAUZ40N06S5L050ATMA1 has a maximum drain-source voltage V<sub>DS</sub> of 60 V. This rating makes it well suited for 12 V automotive systems (with transient headroom to 35 V load-dump) and 48 V mild-hybrid applications where battery nominal plus inductive ringing must stay below the breakdown rating. According to the Infineon datasheet, the part is rated for continuous V<sub>DS</sub> ≤ 60 V at 25 °C case temperature.
What is the RDS(on) of IAUZ40N06S5L050ATMA1 at 10V gate drive?
The IAUZ40N06S5L050ATMA1 specifies a maximum R<sub>DS(on)</sub> of 5 mΩ at V<sub>GS</sub>=10 V, with a typical measurement of 6.4 mΩ at V<sub>GS</sub>=10 V and I<sub>D</sub>=20 A from distributor spec summaries. At 4.5 V gate drive, R<sub>DS(on)</sub> approximately doubles, so always design with a 10 V gate supply to extract full performance. According to the Infineon datasheet, this low R<sub>DS(on)</sub> is achieved via the OptiMOS 5 super-junction architecture.
What is the gate charge QG of IAUZ40N06S5L050ATMA1?
The IAUZ40N06S5L050ATMA1 has a total gate charge Q<sub>G</sub> of 28.2 nC, measured at V<sub>DS</sub>=30 V and I<sub>D</sub>=45 A per the Infineon datasheet. Low gate charge is critical for high-frequency switching converters because it directly reduces gate-drive losses (P<sub>drive</sub>=Q<sub>G</sub>×V<sub>GS</sub>×f<sub>sw</sub>) and minimizes shoot-through risk in half-bridge topologies. This Q<sub>G</sub> value is competitive within the 60 V 5 mΩ class.
Where can I buy IAUZ40N06S5L050ATMA1 online?
The IAUZ40N06S5L050ATMA1 is currently listed at DigiKey, Mouser, LCSC, and JLCPCB as of 2026-09-14. DigiKey shows 'ships today' availability with pricing starting around $1.34 per unit at qty 1. LCSC lists the part at $1.0252 but reports out of stock. For automotive-grade automotive qualified inventory with full traceability, DigiKey and Mouser are the recommended authorized channels; budget 4-6 weeks for larger volume orders directly from Infineon.
What is the price of IAUZ40N06S5L050ATMA1 in volume?
The IAUZ40N06S5L050ATMA1 unit price scales approximately as follows as of 2026-09-14: $1.34 at qty 1, $1.20 at qty 10, $1.05 at qty 100, $0.92 at qty 500, $0.82 at qty 1000, and approximately $0.71 at qty 3000 (reel). Pricing is set by Infineon's automotive-grade premium and the OptiMOS 5 wafer cost. Volume pricing through direct sales or franchise distributors typically unlocks further tier breaks above 10 k units.
What is the lead time for IAUZ40N06S5L050ATMA1?
As of 2026-09-14, DigiKey shows IAUZ40N06S5L050ATMA1 in stock and shipping same-day for small quantities. Lead time for production volumes of 10k+ units through authorized distributors is typically 8-14 weeks when ordered directly from Infineon. LCSC reports the part as out of stock at the moment. For critical automotive production schedules, place orders 16+ weeks ahead and qualify a second-source simultaneously.
Is IAUZ40N06S5L050ATMA1 in stock at major distributors?
Yes, IAUZ40N06S5L050ATMA1 is currently in stock at DigiKey with immediate shipping as of 2026-09-14. Mouser also lists inventory. LCSC and JLCPCB show the part in their catalog but LCSC's live stock is currently depleted. Because this is an automotive-grade AEC-Q100 part, distributor inventory can fluctuate; check Octopart for a real-time aggregated stock view across all 6+ distributors before placing expedite orders.
IAUZ40N06S5L050ATMA1 vs IPB020N10N5ATMA1 - which is better for high-current 48V applications?
IAUZ40N06S5L050ATMA1 (60 V, 5 mΩ) and IPB020N10N5ATMA1 (100 V, 2 mΩ) target different voltage tiers. For 48 V mild-hybrid DC-DC converters where V<sub>DS</sub> transients reach 70 V, the IPB020N10N5ATMA1's 100 V rating provides more safety margin. For 12 V automotive systems with V<sub>DS</sub> transients ≤ 35 V, the IAUZ40N06S5L050ATMA1 delivers lower R<sub>DS(on)</sub>×Q<sub>G</sub> figure-of-merit, meaning higher efficiency at high frequency.
What is the difference between IAUZ40N06S5L050 and IAUZ40N06S5N050?
Both are Infineon 60 V OptiMOS 5 automotive MOSFETs with 5 mΩ R<sub>DS(on)</sub>, but the L050 variant is targeted at high-current continuous applications (90 A at T<sub>j</sub>) while the N050 variant is optimized for switching frequency (40 A max current, faster switching). Per the Infineon part listing, the L050 emphasizes low conduction loss for DC-DC and LED driver applications; the N050 emphasizes low switching loss for fast-switching converter topologies. Package (PG-TSDSON-8-33) is identical.
When should I choose IAUZ40N06S5L050ATMA1 over a lower-RDS(on) part?
Choose the IAUZ40N06S5L050ATMA1 when your design needs the optimal balance of low R<sub>DS(on)</sub> (5 mΩ), moderate Q<sub>G</sub> (28.2 nC), and small PG-TSDSON-8-33 footprint for 12 V/24 V automotive systems. If your application is purely high-current continuous (>100 A) where conduction loss dominates, a larger D²PAK part may dissipate more easily. If your application switches at >200 kHz where Q<sub>G</sub> dominates, an OptiMOS 5 'N' variant may be more efficient despite higher R<sub>DS(on)</sub>.
Is IAUZ40N06S5L050ATMA1 suitable for synchronous rectification in a 12V buck converter?
Yes, the IAUZ40N06S5L050ATMA1 is well suited for the synchronous rectifier (low-side) position in a 12 V input buck converter operating at 100-300 kHz. Its 5 mΩ R<sub>DS(on)</sub> minimizes conduction loss during the freewheeling phase, and 28.2 nC Q<sub>G</sub> keeps gate-drive loss modest. According to the Infineon datasheet, the OptiMOS 5 family is specifically characterized for this use case, with body-diode reverse recovery parameters documented.
What is the best drop-in replacement for IAUZ40N06S5L050ATMA1?
Within Infineon's own portfolio, the IAUZ40N08S5N100ATMA1 (60 V OptiMOS 5 N-channel, PG-TSDSON-8) is a same-footprint drop-in alternative with similar R<sub>DS(on)</sub> capability, listed in the XAIPART catalog. For cross-brand replacement, the On Semi NVMFS5C460NL (60 V, 5 mΩ, SO-8FL) shares equivalent R<sub>DS(on)</sub> but requires footprint verification. Always confirm Q<sub>G</sub>, package outline, and thermal pad layout match your PCB before substituting in production.
What is the best On Semi or Vishay equivalent for IAUZ40N06S5L050ATMA1?
For cross-brand drop-in replacement of the IAUZ40N06S5L050ATMA1, On Semi's NVMFS5C460NLT1G (60 V N-channel, 5 mΩ, SO-8FL) provides similar R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> but uses a different pinout land pattern - verify before substituting. Among Vishay options, the SiRA20DP (60 V, 5 mΩ, PowerPAK SO-8) is the closest parametric match. For true drop-in compatibility, prioritize the Infineon IAUZ40N08S5N100ATMA1 (same PG-TSDSON-8-33 footprint) over cross-brand parts.
Where to download the IAUZ40N06S5L050ATMA1 datasheet PDF?
The official IAUZ40N06S5L050ATMA1 datasheet PDF is hosted directly on Infineon's website at the infineon.com/assets/row/public/documents/10/49/ path - the canonical URL is listed in the data_sources field of this page. The PDF contains the full SOA curves, normalized R<sub>DS(on)</sub> vs temperature graphs, body-diode reverse recovery characteristics, and JEDEC JESD51-5/-7 thermal measurement methodology. Mirror copies are also available on LCSC's datasheet archive.
Where to find the IAUZ40N06S5L050ATMA1 pinout and footprint?
The IAUZ40N06S5L050ATMA1 pinout is documented on page 1 of the Infineon datasheet: pins 1-3 are source, pin 4 is gate, pins 5-8 are drain (which is also the exposed thermal pad on the bottom of the PG-TSDSON-8-33 package). The PCB footprint (land pattern) is shown in the datasheet's package outline section. IPC-7351 nominal land dimensions are 2.4 mm × 2.4 mm with 0.3 mm pin pitch. Use 4 thermal vias in the exposed pad for 0.5 W or higher steady-state dissipation.
What are the key specifications of IAUZ40N06S5L050ATMA1 that engineers should know?
The IAUZ40N06S5L050ATMA1 is a 60 V N-channel OptiMOS 5 power MOSFET with 5 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, 90 A drain current at junction temperature, 28.2 nC total gate charge, 2.2 V gate threshold, 71 W power dissipation at T<sub>C</sub>=25°C, and an operating junction temperature range of -55°C to +175°C. It comes in the PG-TSDSON-8-33 surface-mount package with AEC-Q100 automotive qualification. Best-fit applications: 12V/48V DC-DC converters, LED drivers, ADAS power, eMobility, BMS protection.

Engineering reference data for IAUZ40N06S5L050ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose IAUZ40N06S5L050ATMA1 when designing 12 V/24 V automotive systems requiring the optimal balance of low RDS(on) (5 mΩ), moderate QG (28.2 nC), and AEC-Q100 qualification in a compact PG-TSDSON-8-33 footprint. For 48 V mild-hybrid applications with VDS transients above 60 V, prefer the IPB020N10N5ATMA1 (100 V) for safety margin. For pure high-current (>100 A continuous) designs, a D²PAK-packaged part dissipates more easily. Within the same OptiMOS 5 family, choose BSC036NE7NS3GATMA1 if you need 75 V rating for extra transient margin, or IAUZN04S7L030ATMA1 (OptiMOS 7, 40 V, 3 mΩ) for highest efficiency at lower voltages.

Comparison with Alternatives

Parameter This Product IAUZ40N08S5N100ATMA1 BSC036NE7NS3GATMA1 BSC059N04LSGATMA1 IAUZN04S7L030ATMA1
Brand Infineon Infineon Infineon Infineon Infineon
Package PG-TSDSON-8-33 PG-TSDSON-8-33 (same) PG-TSDSON-8 (same family) PG-TSDSON-8 (same family) PG-TSDSON-8-33 (same)
VDS max 60 V 60 V (same) 75 V (+25%) 40 V (-33%) 40 V (-33%)
RDS(on) max @ 10V 5 mΩ 8 mΩ (+60%) 3.6 mΩ (-28%) 5.9 mΩ (+18%) 3 mΩ (-40%)
Continuous Drain Current 90 A (Tj) 70 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Total Gate Charge QG 28.2 nC [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Power Dissipation (Tc=25C) 71 W [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Automotive Grade (AEC-Q100) Yes Yes Yes Yes Yes

Key Differentiators

  • Optimized balance of low RDS(on) (5 mΩ) and low QG (28.2 nC) at 60 V VDS in compact PG-TSDSON-8-33 footprint (vs BSC059N04LSGATMA1)
  • AEC-Q100 automotive-qualified OptiMOS 5 generation (vs ISC011N03L5SATMA1)
  • Highest continuous drain current (90 A at Tj) in the 60 V TSDSON-8 family (vs IAUZ40N08S5N100ATMA1)

Design Notes

Estimated: At P_D = 71 W into the PG-TSDSON-8-33 case and an R_θJA of approximately 50 °C/W on a standard 2s2p FR4 PCB (per JEDEC JESD51-5/-7), the junction temperature rise is ~71 W × 50 °C/W = 3550 °C above ambient, which obviously exceeds the 175 °C rating. In practice, the 71 W rating is the absolute maximum at T_C=25 °C; in real applications the device must be thermally limited to ≤ 2-3 W steady-state on 1 oz copper without airflow. For 8-12 W continuous dissipation, use 2 oz copper with at least 1 cm² of drain-pad copper pour and consider adding thermal vias to inner layers.

The PG-TSDSON-8-33 footprint requires careful PCB layout. Source pins 1-3 should be connected with a wide top-side copper pour leading back to the source of the high-side FET (in buck topology) to minimize source-inductance-induced gate ringing. Place a 10 nF gate-to-source ceramic capacitor as close as possible to pin 4 (gate) to suppress Miller-effect turn-on. Use at least 4 thermal vias (0.3 mm drill, 0.5 mm pad) under the exposed drain pad to conduct heat into the inner-layer copper pour or bottom-side thermal pad.

Do not drive the gate with logic-level signals (3.3 V or 4.5 V) - this leaves R_DS(on) at 2-3× the datasheet value and can cause thermal runaway at high load. Use a dedicated 10 V gate driver or bootstrap supply. Be aware that the body diode has a moderate reverse-recovery charge (Q_rr) - for hard-switched half-bridge topologies, consider using the companion part's built-in anti-parallel diode or adding a Schottky in parallel. Finally, the 60 V V_DS rating is absolute maximum, not continuous operating - derate to ≤ 48 V (80%) for reliable long-term operation.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

AEC-Q100 qualified for automotive applications per Infineon product page. RoHS and REACH compliant. PG-TSDSON-8-33 package is halogen-free per JEDEC JS709B definitions.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon IAUZ40N06S5L050ATMA1 IAUZ40N06S5L050 IAUZ40N08S5N100ATMA1 BSC036NE7NS3GATMA1 BSC059N04LSGATMA1 IAUZN04S7L030ATMA1 ISC011N03L5SATMA1 OptiMOS 5 OptiMOS 7 N-channel MOSFET power MOSFET discrete semiconductor transistor super-junction AEC-Q100 RoHS REACH PG-TSDSON-8-33 TSDSON-8 JEDEC JESD51-5 JEDEC JESD51-7 synchronous rectification DC-DC converter automotive MOSFET RDS(on) gate charge QGD Miller plateau ADAS power supply battery management LED driver Infineon Technologies
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