BSC190N15NS3GATMA1 vs BSC190N15NS3G Comparison
Detailed side-by-side comparison of BSC190N15NS3GATMA1 by Infineon and BSC190N15NS3G by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC190N15NS3GATMA1 | BSC190N15NS3G |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $1.18 |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS 3 (trench-gate) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Operating Temperature Range | -55 C to +150 C | — |
| Package | PG-TDSON-8-1 (TDSON-8 EP) | SuperSO8 5x6 / PG-TDSON-8-1 |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| MSL Level | 1 | — |
| FET Type | — | N-Channel |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (V_DS max) | — | 150 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (V_GS max) | — | +/-20 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: gate threshold voltage] |
| Static Drain-Source R_DS(on) max @ 10 V | — | 19 mOhm |
| Static Drain-Source R_DS(on) typ @ 10 V | — | [DATA_NEEDED: typical R_DS(on) at 10 V] |
| Total Power Dissipation (P_D, Tc=25C) | — | 125 W |
| Operating Junction Temperature | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL rating] |
| Pin Count | — | 8 |