BSC190N15NS3GATMA1 vs BSC190N15NS3G 对比

详细并排对比 BSC190N15NS3GATMA1 出自 Infineon 和 BSC190N15NS3G 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC190N15NS3G BSC190N15NS3G - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon

BSC190N15NS3G - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon

BSC190N15NS3G ✓ 量产中

规格对比

参数 BSC190N15NS3GATMA1 BSC190N15NS3G
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $1.18
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (trench-gate)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
工作温度范围 -55 C to +150 C —
封装 PG-TDSON-8-1 (TDSON-8 EP) SuperSO8 5x6 / PG-TDSON-8-1
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
MSL 等级 1 —
FET Type — N-Channel
Manufacturer — Infineon Technologies
Drain-Source Voltage (V_DS max) — 150 V
Continuous Drain Current (I_D, Tc) — 50 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (V_GS max) — +/-20 V
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: gate threshold voltage]
Static Drain-Source R_DS(on) max @ 10 V — 19 mOhm
Static Drain-Source R_DS(on) typ @ 10 V — [DATA_NEEDED: typical R_DS(on) at 10 V]
Total Power Dissipation (P_D, Tc=25C) — 125 W
工作结温 — -55C to +150C
Lead-Free / RoHS — Yes (per Infineon product page)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL rating]
引脚数量 — 8

数据手册与资源

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