BSC190N15NS3GATMA1 vs BSC190N15NS3G Vergleich
Detaillierter Direktvergleich von BSC190N15NS3GATMA1 von Infineon und BSC190N15NS3G von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSC190N15NS3GATMA1 | BSC190N15NS3G |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $1,18 |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS 3 (trench-gate) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Betriebstemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-TDSON-8-1 (TDSON-8 EP) | SuperSO8 5x6 / PG-TDSON-8-1 |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 | — |
| FET Type | — | N-Channel |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (V_DS max) | — | 150 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (V_GS max) | — | +/-20 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: gate threshold voltage] |
| Static Drain-Source R_DS(on) max @ 10 V | — | 19 mOhm |
| Static Drain-Source R_DS(on) typ @ 10 V | — | [DATA_NEEDED: typical R_DS(on) at 10 V] |
| Total Power Dissipation (P_D, Tc=25C) | — | 125 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL rating] |
| Pin-Anzahl | — | 8 |