BSC340N08NS3GATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of BSC340N08NS3GATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC340N08NS3GATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 23 A | — |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | 65 W |
| Power Dissipation (Ta) | 2.5 W | 2.3 W |
| Operating Temperature Range | -55C to +150C | — |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | — |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | — | -55 C to +175 C |
| Package / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |