BSC340N08NS3GATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC340N08NS3GATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC340N08NS3GATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC340N08NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 23 A —
Continuous Drain Current (ID, Ta) 7 A —
Pulsed Drain Current (IDM) 92 A —
On-State Resistance RDS(on) max @ VGS=10V 34 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage VGS max +/- 20 V —
Power Dissipation (Tc) 32 W 65 W
Power Dissipation (Ta) 2.5 W 2.3 W
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8-5 (SuperSO8 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
RoHS / Lead-Free RoHS compliant, lead-free —
Channel Type Single N-Channel —
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical] —
Avalanche Rating Repetitive avalanche rated —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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