BSC520N15NS3G vs BSC190N15NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC520N15NS3G by Infineon and BSC190N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC520N15NS3G BSC190N15NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.98
Manufacturer Infineon Technologies —
Part Number BSC520N15NS3 G —
Technology OptiMOS 3 (trench-gate N-channel) OptiMOS 3 (N-Channel)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) max at TC=25C 21 A —
On-Resistance RDS(on) max 52 mΩ at VGS=10 V —
Power Dissipation (Ptot) at TC=25C 57 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2.5 V to 3.5 V
Operating Junction Temperature -55C to +150C —
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON-8 EP)
Mounting Type Surface Mount Surface Mount
Pin Count 8 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC —
Channel Type N-Channel (normal level) —
Typical Application DC-DC conversion, synchronous rectification —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 19 mOhm
On-Resistance RDS(on) typ at VGS=10V — [DATA_NEEDED: RDS(on) typical at 10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C — 125 W
Operating Temperature Range — -55 C to +150 C
RoHS Status — Compliant
MSL Level — 1

Datasheets & Resources

Browse All Products Create BOM Request Quote