BSC520N15NS3G vs BSC190N15NS3GATMA1 对比
详细并排对比 BSC520N15NS3G 出自 Infineon 和 BSC190N15NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ 量产中规格对比
| 参数 | BSC520N15NS3G | BSC190N15NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.98 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC520N15NS3 G | — |
| Technology | OptiMOS 3 (trench-gate N-channel) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) max | 150 V | — |
| Continuous Drain Current (ID) max at TC=25C | 21 A | — |
| On-Resistance RDS(on) max | 52 mΩ at VGS=10 V | — |
| Power Dissipation (Ptot) at TC=25C | 57 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.5 V to 3.5 V |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON-8 EP) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC | — |
| Channel Type | N-Channel (normal level) | — |
| Typical Application | DC-DC conversion, synchronous rectification | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| 工作温度范围 | — | -55 C to +150 C |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | 1 |