BSC520N15NS3G vs BSC360N15NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC520N15NS3G by Infineon and BSC360N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC520N15NS3G BSC360N15NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC520N15NS3 G BSC360N15NS3GATMA1
Technology OptiMOS 3 (trench-gate N-channel) OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) max at TC=25C 21 A —
On-Resistance RDS(on) max 52 mΩ at VGS=10 V —
Power Dissipation (Ptot) at TC=25C 57 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Operating Junction Temperature -55C to +150C —
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 8 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC —
Channel Type N-Channel (normal level) —
Typical Application DC-DC conversion, synchronous rectification —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Operating Temperature Range — -55°C to +150°C (junction)
Avalanche Energy Rated — Yes
RoHS Status — Compliant
Lead-Free — Yes
MSL Level — 1

Datasheets & Resources

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