BSD235CH6327XTSA1 vs SI1553DL-T1-GE3 Comparison
Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and SI1553DL-T1-GE3 by Vishay Intertechnology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ ActiveVishay Intertechnology
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
SI1553DL-T1-GE3 ✓ ActiveSpecification Comparison
| Parameter | BSD235CH6327XTSA1 | SI1553DL-T1-GE3 |
|---|---|---|
| Brand | Infineon | Vishay Intertechnology |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $0.14 |
| Manufacturer | Infineon Technologies | Vishay Siliconix |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | — |
| Operating Temperature Range | -55 °C to +150 °C (junction) | -55C to +150C (TJ) |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| RoHS Status | Compliant (lead-free) | — |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Pin Count | 6 | — |
| Part Number | — | SI1553DL-T1-GE3 |
| Transistor Polarity | — | Complementary N and P Channel |
| Number of Channels | — | 2 (1 N-channel + 1 P-channel) |
| Drain-Source Voltage VDS (max) | — | 20 V |
| Continuous Drain Current ID - N-Channel | — | 700 mA |
| Continuous Drain Current ID - P-Channel | — | 500 mA |
| On-Resistance RDS(on) - N-Channel | — | 0.32 ohm (typ at VGS = 4.5 V) |
| On-Resistance RDS(on) - P-Channel | — | [DATA_NEEDED: P-channel RDS(on) value] |
| Gate-Source Threshold VGS(th) | — | 2.5 V (max) |
| Gate-Source Voltage VGS (max) | — | [DATA_NEEDED: +/- VGS absolute maximum] |
| Power Dissipation PD | — | 340 mW |
| Package | — | SC-70-6 / SOT-363-6 |
| Process Technology | — | TrenchFET |
| Termination Finish | — | Lead-free (Pb-free), Halogen-free |
| RoHS Compliance | — | Compliant per Directive 2002/95/EC |
| Halogen Free | — | Yes (per IEC 61249-2-21) |