BSD235CH6327XTSA1 vs SI1553DL-T1-GE3 对比

详细并排对比 BSD235CH6327XTSA1 出自 Infineon 和 SI1553DL-T1-GE3 出自 Vishay Intertechnology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Vishay Intertechnology
SI1553DL-T1-GE3 SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay

SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay

SI1553DL-T1-GE3 ✓ 量产中

规格对比

参数 BSD235CH6327XTSA1 SI1553DL-T1-GE3
品牌 Infineon Vishay Intertechnology
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.14
Manufacturer Infineon Technologies Vishay Siliconix
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
安装类型 Surface Mount Surface Mount
Technology OptiMOS™ low-voltage —
工作温度范围 -55 °C to +150 °C (junction) -55C to +150C (TJ)
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS 状态 Compliant (lead-free) —
MSL 等级 1 [DATA_NEEDED: MSL rating]
引脚数量 6 —
Part Number — SI1553DL-T1-GE3
Transistor Polarity — Complementary N and P Channel
Number of Channels — 2 (1 N-channel + 1 P-channel)
Drain-Source Voltage VDS (max) — 20 V
Continuous Drain Current ID - N-Channel — 700 mA
Continuous Drain Current ID - P-Channel — 500 mA
On-Resistance RDS(on) - N-Channel — 0.32 ohm (typ at VGS = 4.5 V)
On-Resistance RDS(on) - P-Channel — [DATA_NEEDED: P-channel RDS(on) value]
Gate-Source Threshold VGS(th) — 2.5 V (max)
Gate-Source Voltage VGS (max) — [DATA_NEEDED: +/- VGS absolute maximum]
Power Dissipation PD — 340 mW
封装 — SC-70-6 / SOT-363-6
Process Technology — TrenchFET
Termination Finish — Lead-free (Pb-free), Halogen-free
RoHS Compliance — Compliant per Directive 2002/95/EC
无卤 — Yes (per IEC 61249-2-21)

数据手册与资源

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