IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPD068N10N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.05 | $10.50 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
Drop-in alternatives for IPD068N10N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD088N10N3GATMA1
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IPD069N10N3GATMA1
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IPB027N10N3GATMA1
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View Datasheet →IPB024N10N5ATMA1
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View Datasheet →NTD4906N
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IPD068N10N3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD068N10N3GATMA1 |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| On-Resistance RDS(on) max | 6.8 mOhm |
| Power Dissipation (PD) at Tc | 150 W |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) |
| Package | PG-TO252-3 (DPAK, 2 leads + tab) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C |
| Channel Type | N-Channel |
| Configuration | Single |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Packing | Tape & Reel (T/R) |
| Qualification | Industrial (non-automotive) |
IPD068N10N3GATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input |
| Pin 2 | Drain (D) — Drain connection (also tied to exposed tab) |
| Pin 3 | Source (S) — Source connection |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IPD068N10N3GATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Server and Datacenter DC-DC Converters, Motor Drive H-Bridge (Low-Voltage), Hot-Swap and OR-ing Controllers, Solar Micro-Inverter and MPPT Stages, Industrial SMPS and Welding Inverters.
48V Telecom Synchronous Rectification
The IPD068N10N3GATMA1's 6.8 mOhm RDS(on) and 100V VDS rating make it ideal for synchronous-rectifier positions in 48V telecom bus converters. At 50A load, conduction loss is approximately 17W, enabling >97% efficiency in full-bridge LLC topologies. The DPAK package allows direct PCB-side cooling through the exposed tab, and the 90A continuous rating provides substantial design margin for peak rectifier currents. Compared to Schottky-diode rectification, the MOSFET synchronous approach eliminates diode forward-voltage drop (typically 0.5-0.8V) and recovers 20-30W at full load. Designers should add a dead-time control circuit to prevent shoot-through during switching transitions.
Recommended
Server and Datacenter DC-DC Converters
In 48V-to-12V intermediate-bus converters for hyperscale datacenters, the IPD068N10N3GATMA1 serves as the primary-side switch in hard-switched or resonant topologies. Its OptiMOS 3 technology delivers low gate charge (Qg) for fast switching at 100-300 kHz, and the 100V breakdown withstands ringing on 48V nominal rails. The DPAK footprint is compatible with high-density SMD assembly lines used by server PSU OEMs. At 30A continuous and 100 kHz, estimated switching loss is 3-5W per device. Pair with a digital controller such as the Infineon XMC1300 for peak-current-mode control and adaptive dead-time optimization.
Recommended
Motor Drive H-Bridge (Low-Voltage)
The IPD068N10N3GATMA1 is well suited for H-bridge positions in 24-48V brushless DC motor drives, robotics, and e-bike controllers. The 90A continuous rating supports multi-kilowatt motor power, and the 100V VDS provides 2x safety margin over a 48V battery bus with inductive ringing. The DPAK package enables four MOSFETs to be placed on a compact PCB with shared thermal copper. Designers should add gate-source resistors (typically 10-100 kOhm) to prevent Miller-effect turn-on, and use a gate driver with sufficient sink current (1-2A) to control dv/dt. The 175°C junction rating permits sustained high-current operation at elevated ambient temperatures.
Recommended
Hot-Swap and OR-ing Controllers
In -48V telecom hot-swap and redundant OR-ing applications, the IPD068N10N3GATMA1 acts as the low-side switch or OR-ing FET, leveraging its 100V VDS and 6.8 mOhm RDS(on) to minimize voltage drop during normal operation. The 90A continuous rating supports high-current distribution boards, while the 175°C Tj-max allows sustained operation in poorly ventilated chassis. Add a current-sense resistor and a hot-swap controller IC to implement inrush-current limiting. The DPAK footprint accommodates the necessary gate-drive and sense circuitry on a compact PCB.
Recommended
Solar Micro-Inverter and MPPT Stages
The IPD068N10N3GATMA1 fits solar micro-inverter and MPPT buck stages operating from 60-cell or 72-cell panel strings (Voc up to 50V at cold extremes). The 100V VDS rating provides margin for inductive transients and grid-side transients in transformer-coupled topologies, while the 6.8 mOhm RDS(on) minimizes conduction loss in continuous-conduction-mode MPPT operation. The DPAK package's thermal pad allows direct attachment to an aluminum substrate for outdoor enclosure cooling. For full-bridge inverter legs, pair two IPD068N10N3GATMA1 with a gate driver and a digital MPPT controller. Estimated annual energy yield improvement over a 10 mOhm alternative is 0.3-0.5% in 200W micro-inverter applications.
Recommended
Industrial SMPS and Welding Inverters
In industrial SMPS, induction-heating, and small-welding-inverter applications, the IPD068N10N3GATMA1 serves as a primary-side switch in ZVS or hard-switched topologies. The 100V VDS withstands leakage-inductance spikes, and the 90A continuous rating supports multi-kW output power. The 6.8 mOhm RDS(on) reduces primary-side conduction loss by 15-20% versus the previous generation, improving overall inverter efficiency. Designers should use a ferrite-core transformer with low leakage inductance, and add RC snubbers across the primary winding to limit dv/dt. The DPAK package is compatible with wave-solder and selective-solder assembly for hybrid power modules.
Recommended
Recommended Products Summary
Engineering reference data for IPD068N10N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD088N10N3GATMA1 | IPD069N10N3GATMA1 | IPB027N10N3GATMA1 | NTD4906N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| VDS (V) | 100 V | 100 V | 100 V | 100 V | 100 V |
| ID continuous (A) | 90 A | 80 A | 90 A | 180 A | 76 A |
| RDS(on) max (mOhm) | 6.8 mOhm | 8.8 mOhm | 6.9 mOhm | 2.7 mOhm | 7.5 mOhm |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | Trench MOSFET |
| Power Dissipation (W) | 150 W | 150 W | 150 W | 300 W | 125 W |
| Junction Temperature (C) | 175 C | 175 C | 175 C | 175 C | 175 C |
Key Differentiators
- Best-in-class RDS(on) in 100V DPAK OptiMOS 3 family (vs IPD088N10N3GATMA1)
- Compact DPAK footprint with high current capability (vs IPB027N10N3GATMA1 (D2PAK))
- Proven OptiMOS 3 technology with broad second-source availability (vs NTD4906N (onsemi))
Design Notes
Estimated: At ID=50A and RDS(on)=6.8 mOhm, conduction loss is approximately 17W. The DPAK (PG-TO252-3) package has a typical theta_JA of 50 C/W on a 1 sq-inch copper pad on FR-4, producing a junction temperature rise of ~140 C above ambient. For reliable operation at 50A continuous, design the PCB thermal pad with at least 2-3 sq inches of copper, thermal vias to inner planes, and consider an aluminum substrate for >40A sustained current. Always verify thermal performance under worst-case ambient and airflow conditions.
Route the gate-drive trace as a short, direct path from the driver IC to the gate pin, with the gate-source resistor placed within 5mm of the gate pin. Keep the power loop (drain-source) area minimal to reduce parasitic inductance, which can cause voltage spikes exceeding VDS rating during turn-off. For high-di/dt applications, use a snubber (RC or RCD) across the drain-source terminals. Place a 10kOhm pull-down resistor on the gate to prevent inadvertent turn-on during power-up sequencing.
Do not exceed the SOA boundaries during turn-on of inductive loads. The single-pulse avalanche rating (EAR) is a non-repetitive limit - repetitive avalanche operation reduces lifetime. Always add a TVS diode or RC snubber for repetitive inductive switching. Verify VGS does not exceed the maximum rating of +/-20V; use a gate-drive Zener clamp if transients are possible. The exposed tab is electrically connected to the drain - ensure adequate clearance from low-voltage signal traces.
Compliance Information
RoHS compliant per Infineon product page. Industrial grade, not AEC-Q100 qualified. Lead-free reflow-compatible per JEDEC J-STD-020.
