BSO150N03MDGXUMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSO150N03MDGXUMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSO150N03MDGXUMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.37 $0.78
Manufacturer Infineon Technologies β€”
Part Number BSO150N03MDGXUMA1 β€”
Product Type Dual N-Channel MOSFET Array β€”
Technology OptiMOS 3M (30V trench MOSFET) β€”
Drain-Source Voltage (VDS) max 30 V β€”
Continuous Drain Current (ID) max per channel 9.3 A β€”
On-State Resistance (RDS(on)) max 15 mOhm at VGS=10V β€”
Gate-Source Voltage (VGS) max 20 V β€”
Gate Threshold Voltage (VGS(th)) typ 1.0 V β€”
Power Dissipation (PD) max 1.4 W β€”
Operating Temperature Range -55C to +150C -55C to +150C (Tj)
Package PG-DSO-8 (SO-8 with exposed pad) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) β€”
RoHS Status Compliant β€”
Channel Configuration Dual N-Channel (independent) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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