BSP125H6433XTMA1 vs BSR316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP125H6433XTMA1 by Infineon and BSR316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP125H6433XTMA1
BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon
BSP125H6433XTMA1 β Active
Specification Comparison
| Parameter | BSP125H6433XTMA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.22 |
| FET Type | N-Channel Enhancement Mode | P-Channel Enhancement Mode |
| Drain-Source Voltage (V(BR)DSS) | 600 V | β |
| Continuous Drain Current (ID) at TA | 120 mA | -360 mA |
| Power Dissipation (PD) at TA | 1.8 W | β |
| Package | PG-SOT223-4 (3+tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| Lead Plating | Pb-free | β |
| RoHS Status | Compliant | Compliant |
| Operating Temperature Range | -55C to +150C (TJ) | -55 C to +150 C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total Qg] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA on standard PCB] | β |
| Configuration | Single N-Channel MOSFET | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSR316PH6327XTSA1 |
| Series | β | OptiMOS |
| Drain-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TC | β | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | β | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | β | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | β | 500 mW |
| Qualification | β | Automotive |
| MSL Level | β | 1 |
| Polarity | β | P-Channel |