BSP125H6433XTMA1 vs BSR316PH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP125H6433XTMA1 sa pamamagitan ng Infineon at BSR316PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 ✓ Nakahanda
Infineon
BSR316PH6327XTSA1 BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP125H6433XTMA1 BSR316PH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel Enhancement Mode P-Channel Enhancement Mode
Drain-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (ID) at TA 120 mA -360 mA
Power Dissipation (PD) at TA 1.8 W —
Packhaging PG-SOT223-4 (3+tab) PG-SC59-3 (SC-59 / SOT-23 equivalent)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Lead Plating Pb-free —
Tindminan RoHS Compliant Compliant
Hanay ng Temperature na Operasyon -55C to +150C (TJ) -55 C to +150 C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Thermal Resistance RthJA [DATA_NEEDED: theta_JA on standard PCB] —
Configuration Single N-Channel MOSFET —
Manufacturer — Infineon Technologies
Part Number — BSR316PH6327XTSA1
Series — OptiMOS
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Qualification — Automotive
Level ng MSL — 1
Polarity — P-Channel

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