BSP125H6433XTMA1 vs BSR316PH6327XTSA1 对比
详细并排对比 BSP125H6433XTMA1 出自 Infineon 和 BSR316PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSP125H6433XTMA1 | BSR316PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.22 |
| FET Type | N-Channel Enhancement Mode | P-Channel Enhancement Mode |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at TA | 120 mA | -360 mA |
| Power Dissipation (PD) at TA | 1.8 W | — |
| 封装 | PG-SOT223-4 (3+tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS 状态 | Compliant | Compliant |
| 工作温度范围 | -55C to +150C (TJ) | -55 C to +150 C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA on standard PCB] | — |
| Configuration | Single N-Channel MOSFET | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR316PH6327XTSA1 |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Qualification | — | Automotive |
| MSL 等级 | — | 1 |
| Polarity | — | P-Channel |