BSP149H6327XTSA1 vs BSS806NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP149H6327XTSA1 by Infineon and BSS806NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
BSS806NH6327XTSA1 ✓ ActiveSpecification Comparison
| Parameter | BSP149H6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Polarity | N-Channel | — |
| Mode of Operation | Depletion Mode (normally ON) | — |
| Drain-Source Voltage VDS | 200 V | — |
| Continuous Drain Current ID | 660 mA (Ta) | — |
| Power Dissipation PD | 1.8 W (Ta) | — |
| On-State Resistance RDS(on) | 1 ohm (typ) | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: max VGS rating] | — |
| Package | PG-SOT223-4 (SOT-223-4) | PG-SOT23-3 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (Tj) | — |
| Technology | SIPMOS | OptiMOS 2 (trench MOSFET) |
| Channel Count | 1 | — |
| Pin Count | 4 (G, D, S, tab) | — |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on) max) | — | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| Operating Temperature Range | — | -55 C to +150 C (junction) |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | — | AEC-Q101 qualified |