BSP315PH6327XTSA1 vs BSP316PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP315PH6327XTSA1 by Infineon and BSP316PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP315PH6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | OptiMOS (enhancement mode) | SIPMOS (P-channel MOSFET) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -1.17 A (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +150 C (junction) |
| Package | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Number of Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| RoHS Status | — | Compliant |
| Packaging | — | Tape & Reel (H6327 suffix) |