BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
MPN: BSP316PH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.38 | $3.80 |
| 100 | $0.31 | $31.00 |
| 500 | $0.27 | $135.00 |
| 1,000 | $0.24 | $240.00 |
| 3,000 | $0.21 | $630.00 |
Drop-in alternatives for BSP316PH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSP316PH6327XTSA1 Maximum Ratings & Electrical Characteristics
| FET Type | P-Channel |
| Drain-to-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W |
| Package | PG-SOT223-4 (TO-261-4) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Number of Pins | 3 + thermal tab |
| Channel Mode | Enhancement |
| Technology | SIPMOS (P-channel MOSFET) |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Packaging | Tape & Reel (H6327 suffix) |
BSP316PH6327XTSA1 Pin Configuration
| Pin 1 | Gate — Gate control input; pull to source minus VGS(th) to turn on |
| Pin 2 | Drain — Drain terminal (connected to the center thermal tab internally) |
| Pin 3 | Source — Source terminal; for P-channel high-side use, connects to the load rail |
| Pin 4 | Drain Tab — Center thermal pad serving as the drain connection and heatsink; solder to PCB copper pour |
Safe Operating Area - BSP316P
Typical Applications
BSP316PH6327XTSA1 is suitable for 6 applications: 48V Industrial High-Side Load Switch, Reverse-Polarity Protection Circuit, USB Power-Distribution Switch, Battery-Discharge Control in Portable Instruments, Telecom 36V-72V Hot-Swap Controller, LED Matrix Row Driver.
48V Industrial High-Side Load Switch
The BSP316PH6327XTSA1 is a strong fit for 48V industrial high-side load switching because its -100V VDS rating provides more than 2x headroom over the nominal 48V rail, withstanding inductive transients from relays, solenoids, and motor windings without an external TVS clamp. The P-channel construction simplifies the gate driver to a single logic-level NPN transistor pulling the gate to ground, eliminating the bootstrap or charge-pump circuitry an N-channel high-side switch would require. Designers place the part between the 48V rail and the load with a 100k gate-source pull-up resistor; the 1.8W power dissipation rating supports continuous currents up to 680mA when the SOT-223 thermal tab is soldered to at least 100mm^2 of 2oz copper.
Recommended
Reverse-Polarity Protection Circuit
The BSP316PH6327XTSA1 excels in reverse-polarity protection (RPP) circuits for industrial controllers and field instruments because its P-channel orientation places the body diode pointing away from the load, blocking reverse battery connection automatically when the gate is held at the source potential through a resistor divider. The -100V VDS rating comfortably covers 24V and 36V battery systems with margin for load-dump transients, while the SOT-223 footprint handles the continuous load current with minimal PCB area. Compared to a Schottky diode RPP solution, the MOSFET RPP approach reduces forward drop from 0.4V to roughly 0.1V, cutting power loss by 4x and eliminating the need for thermal management at higher currents.
Recommended
USB Power-Distribution Switch
The BSP316PH6327XTSA1 serves as a USB VBUS power-distribution switch in hubs, docking stations, and industrial USB peripherals because its P-channel configuration allows a 3.3V or 5V GPIO from a microcontroller to drive the gate directly without level translation. The -100V VDS rating is overkill for 5V USB but provides exceptional robustness against ESD-induced overvoltage events and accidental shorts to higher-voltage rails. The 680mA continuous current rating covers USB 2.0 high-power device classes, and the SOT-223 footprint handles the 500mA continuous load with thermal margin when the drain tab is properly soldered to copper pour.
Recommended
Battery-Discharge Control in Portable Instruments
The BSP316PH6327XTSA1 is well matched to battery-discharge control in handheld test instruments, medical monitors, and IoT field devices because its P-channel configuration places the switch in the negative return path, allowing the load to remain referenced to true ground for accurate analog measurements. The -100V VDS rating exceeds the stacked Li-ion or LiFePO4 cell voltages by an order of magnitude, ensuring reliability even if a cell stack configuration is miswired. The 680mA current rating covers typical sensor and microcontroller loads, and the SOT-223 package survives the mechanical shock and vibration typical of portable equipment.
Recommended
Telecom 36V-72V Hot-Swap Controller
The BSP316PH6327XTSA1 functions as the main pass element in telecom hot-swap controllers where input voltages range from 36V to 72V (nominal 48V) because its -100V VDS rating accommodates the full range with substantial transient headroom for ringing during hot-plug events. The P-channel device simplifies the hot-swap control loop by allowing the gate to be charged through a constant-current source or soft-start capacitor, providing inrush current limiting without complex gate-drive circuitry. The 680mA rating suits low-power FRU (Field Replaceable Unit) cards and small fans; for higher currents, designers can parallel multiple devices on a shared heatsink.
Recommended
LED Matrix Row Driver
The BSP316PH6327XTSA1 works as a row driver in LED matrix displays and signage where its P-channel construction simplifies the row-selection logic by referencing each row to the LED stack return, eliminating the level-shifting circuitry needed for N-channel high-side drivers. The -100V VDS rating supports stacks of 10-20 series LEDs at 24V-36V total, while the 680mA current rating drives full rows of small-signal indicator LEDs. The SOT-223 package allows dense PCB layouts, and the 1.8W dissipation handles the pulse loads typical of multiplexed LED matrices where duty cycle is below 50%.
Recommended
Recommended Products Summary
Engineering reference data for BSP316PH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSL308PEH6327XTSA1 | BSP88H6327XTSA1 | BSD235CH6327XTSA1 | BSS205NH6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT223-4 | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) |
| FET Type | P-Channel | P-Channel | N-Channel | Complementary N+P | N-Channel | N-Channel depletion |
| Drain-to-Source Voltage | -100 V | -30 V | +240 V | -20 V / +20 V | +200 V | +100 V |
| Continuous Drain Current (TA=25C) | -680 mA | -2.1 A | +350 mA | [DATA_NEEDED] | +250 mA | [DATA_NEEDED] |
| Power Dissipation | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- P-channel construction eliminates high-side gate-drive complexity (vs BSP88H6327XTSA1)
- Higher continuous current in same SOT-223 footprint (vs BSL308PEH6327XTSA1)
- Industry-standard Infineon SIPMOS reliability and tooling (vs Cross-brand alternatives from Onsemi/Diodes Inc.)
Design Notes
Estimated: at continuous ID=680 mA and RDS(on) ~5 ohm (per typical SIPMOS P-FET data), the BSP316PH6327XTSA1 dissipates approximately 2.3 W - above the 1.8 W rating. To stay within SOA, solder the SOT-223 drain tab to a minimum of 100 mm^2 of 2 oz copper pour, which keeps theta_JA near 70 C/W and junction temperature below 150 C at 25 C ambient. For higher currents, use the BSL308PEH6327XTSA1 instead.
Place a 100 kohm gate-to-source pull-up resistor directly between pins 1 and 3 to ensure the MOSFET stays off during power-up and any floating-GATE transient. Add a 10 kohm series gate resistor if the gate is driven by a long trace or by a microcontroller output more than 50 mm away to dampen the gate-source RC resonance. Keep the gate trace short and away from the drain tab to minimize Miller coupling.
Do not use the BSP316PH6327XTSA1 as a direct drop-in replacement for an N-channel MOSFET such as BSP88H6327XTSA1 - although the package is identical, the drain and source pin assignments are mirrored for P-channel versus N-channel construction. Always re-verify pinout against the latest Infineon datasheet before substituting. Exceeding VGS of +/-20 V will permanently damage the gate oxide; clamp the gate-source voltage with a 15 V Zener if driving from a higher-voltage logic level.
Compliance Information
RoHS and REACH compliant per Infineon product declaration. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, evaluate the automotive-grade variant.
