BSP88H6327XTSA1 vs BSC0902NSIATMA1 Comparison

Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSP88H6327XTSA1 BSC0902NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Package PG-SOT223-4 (SOT-223-3) PG-TDSON-8-6 (TDSON-8)
Mounting Type Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
Operating Temperature -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Operating Temperature Range — -55C to +150C (junction)
Built-in Diode — Yes (single with built-in diode)
RoHS Status — Compliant
Lead-Free — Yes
Halogen Free — Yes

Datasheets & Resources

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