BSP88H6327XTSA1 vs BSC0902NSIATMA1 Comparaison
Comparaison détaillée côte à côte de BSP88H6327XTSA1 par Infineon et BSC0902NSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSP88H6327XTSA1 | BSC0902NSIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,21 | $0,32 |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| Boîtier | PG-SOT223-4 (SOT-223-3) | PG-TDSON-8-6 (TDSON-8) |
| Type de montage | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Température de fonctionnement | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Plage de température de fonctionnement | — | -55C to +150C (junction) |
| Built-in Diode | — | Yes (single with built-in diode) |
| Statut RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Sans halogène | — | Yes |