BSP88H6327XTSA1 vs BSP315PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP88H6327XTSA1 by Infineon and BSP315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP88H6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.31 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 240 V | -60 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | -1.17 A (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1.8 W (Ta) |
| Package | PG-SOT223-4 (SOT-223-3) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Mounting Type | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Configuration | Single | β |
| Operating Temperature | -55 C to +150 C | β |
| Technology | SIPMOS (planar enhancement mode) | OptiMOS (enhancement mode) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Automotive Qualification | AEC-Q101 qualified | β |
| Lead Plating | Pb-free | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Drain Tab Connection | SOT-223 tab is drain | β |
| FET Type | β | P-Channel |
| Gate-Source Voltage (VGS) | β | Β±20 V (max) |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Avalanche Energy Rated | β | Yes (per datasheet) |
| Lead-Free / RoHS | β | Yes / Compliant |