BSP88H6327XTSA1 vs BSP315PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP88H6327XTSA1 disebabkan oleh Infineon dan BSP315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP88H6327XTSA1 BSP315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 240 V -60 V
Continuous Drain Current (ID) 350 mA at Ta=25 C -1.17 A (Ta)
Power Dissipation (PD) 1.8 W at Ta=25 C 1.8 W (Ta)
Kemasan PG-SOT223-4 (SOT-223-3) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V [DATA_NEEDED: RDS(on) at VGS=-10 V]
Configuration Single —
Suhu Operasi -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) OptiMOS (enhancement mode)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: VGS(th) typical and min/max]
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typical]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
FET Type — P-Channel
Gate-Source Voltage (VGS) — ±20 V (max)
Gambaran Suhu Operasi — -55 C to +150 C (junction)
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant

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