BSP89H6327XTSA1 vs BSP125H6433XTMA1 Comparison

Detailed side-by-side comparison of BSP89H6327XTSA1 by Infineon and BSP125H6433XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP89H6327XTSA1 BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 βœ“ Active
Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 βœ“ Active

Specification Comparison

Parameter BSP89H6327XTSA1 BSP125H6433XTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $1.05
Transistor Type N-Channel MOSFET, enhancement mode β€”
Technology SIPMOS (planar power MOS) β€”
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 Β΅A) β€”
Continuous Drain Current (ID) at Ta=25Β°C 0.35 A β€”
Total Power Dissipation (Ptot) at Ta=25Β°C 1.8 W (on FR4 PCB, 6 cmΒ² cooling area) β€”
On-State Resistance (RDS(on)) max 6 Ξ© (typical) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical and min/max]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Operating Temperature Range -55 Β°C to +150 Β°C (Tj) -55C to +150C (TJ)
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cmΒ² PCB) β€”
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W β€”
Package PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT223-4 (3+tab)
Mounting Type Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) β€”
dv/dt Rated Yes β€”
ESD Protection Internal gate-source Zener β€”
Automotive Qualification AEC-Q101 (per ordering code H6327) AEC-Q101
RoHS Status Compliant Compliant
FET Type β€” N-Channel Enhancement Mode
Drain-Source Voltage (V(BR)DSS) β€” 600 V
Continuous Drain Current (ID) at TA β€” 120 mA
Power Dissipation (PD) at TA β€” 1.8 W
Lead Plating β€” Pb-free
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total Qg]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: Crss]
Thermal Resistance RthJA β€” [DATA_NEEDED: theta_JA on standard PCB]
Configuration β€” Single N-Channel MOSFET

Datasheets & Resources

Browse All Products Create BOM Request Quote