BSP89H6327XTSA1 vs BSP125H6433XTMA1 Comparación
Comparación detallada lado a lado de BSP89H6327XTSA1 por Infineon y BSP125H6433XTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSP89H6327XTSA1 | BSP125H6433XTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $1,05 |
| Tipo de transistor | N-Channel MOSFET, enhancement mode | — |
| Technology | SIPMOS (planar power MOS) | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) | — |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A | — |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) | — |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (Tj) | -55C to +150C (TJ) |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) | — |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | — |
| Encapsulado | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SOT223-4 (3+tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| dv/dt Rated | Yes | — |
| ESD Protection | Internal gate-source Zener | — |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | AEC-Q101 |
| Estado RoHS | Compliant | Compliant |
| FET Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (ID) at TA | — | 120 mA |
| Power Dissipation (PD) at TA | — | 1.8 W |
| Lead Plating | — | Pb-free |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Thermal Resistance RthJA | — | [DATA_NEEDED: theta_JA on standard PCB] |
| Configuration | — | Single N-Channel MOSFET |