BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon
MPN: BSP89H6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.78 | $7.80 |
| 100 | $0.59 | $59.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
Drop-in alternatives for BSP89H6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSP89H6327XTSA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET, enhancement mode |
| Technology | SIPMOS (planar power MOS) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) |
| Operating Temperature Range | -55 °C to +150 °C (Tj) |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W |
| Package | PG-SOT223-4 (SOT-223, 4-pin with tab) |
| Mounting Type | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) |
| dv/dt Rated | Yes |
| ESD Protection | Internal gate-source Zener |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) |
| RoHS Status | Compliant |
BSP89H6327XTSA1 Pin Configuration
| Pin 1 | GATE — Gate input; logic-level drive |
| Pin 2 | DRAIN — Drain connection (internally tied to tab) |
| Pin 3 | SOURCE — Source connection |
| Pin 4 | DRAIN (TAB) — Drain / thermal tab; must be soldered to copper pour |
Safe Operating Area (DC, Ta=25°C)
Typical Applications
BSP89H6327XTSA1 is suitable for 7 applications: 24 V Industrial Bus High-Side Switch, Automotive Relay and Solenoid Driver, Logic-Level Level Shifter (3.3 V to 24 V/48 V), LED Driver High-Side Switch (24 V Strings), Offline Auxiliary Power Supply Switch, Sensor Signal Multiplexer and Switch Matrix, Battery Management Isolator Switch.
24 V Industrial Bus High-Side Switch
The BSP89H6327XTSA1's 240 V V(BR)DSS provides 10x safety margin above 24 V industrial rails (IEC 61131-2 type 1/3), making it ideal for high-side switching of sensors, optocouplers, and small actuators on factory-automation PLC backplanes. Its logic-level gate drive allows direct connection to a 3.3 V or 5 V microcontroller GPIO without a gate-driver IC, and the SOT-223 exposed tab dissipates the ~0.3 W conduction loss without external heatsinking on a 6 cm² copper pour. Pair it with a 100 kΩ gate pull-down resistor for fail-safe off-state behavior during MCU reset.
Recommended
Automotive Relay and Solenoid Driver
The BSP89H6327XTSA1 is AEC-Q101 qualified and rated for 240 V avalanche, making it an excellent low-side driver for 12 V/24 V automotive relays, solenoids, and valve coils. The 240 V breakdown easily absorbs the inductive flyback spike (typically 200-300 V) from a 24 V relay coil, eliminating the need for an external flyback diode in cost-sensitive designs. At 0.35 A continuous current it covers most body-electronics relays. Use a 10 kΩ gate pull-down to keep the relay off during ECU power-up transients.
Recommended
Logic-Level Level Shifter (3.3 V to 24 V/48 V)
The BSP89H6327XTSA1 is purpose-built for level shifting between low-voltage microcontrollers (3.3 V/5 V GPIO) and 24 V or 48 V industrial/telecom rails. Its low gate threshold ensures full enhancement at logic-high levels, and the 240 V drain rating tolerates the higher rail voltage with substantial margin. A typical high-side level-shift configuration uses the BSP89 as a pull-up transistor with a 100 kΩ drain pull-up; turn-on time is dominated by the gate charge (~1-2 nC), enabling sub-microsecond switching for I2C isolators and SPI galvanic isolation bridges.
Recommended
LED Driver High-Side Switch (24 V Strings)
For 24 V LED string drivers in architectural lighting and signage, the BSP89H6327XTSA1 offers logic-level PWM dimming up to 0.35 A per channel with a 240 V avalanche rating that handles the inductive spike of long LED cables. Its SOT-223 footprint enables compact multi-channel driver PCBs. PWM dimming frequencies up to 10 kHz are supported thanks to the small SIPMOS gate charge; use a 1 kΩ gate resistor to slow the edge and reduce EMI on long cable runs.
Recommended
Offline Auxiliary Power Supply Switch
In auxiliary flyback or buck-derived low-power offline supplies (e.g., 5 V/12 V standby rails from universal mains), the BSP89H6327XTSA1 can serve as a primary-side switch for sub-1 W outputs where its 240 V rating covers the rectified 170 V DC bus (120 VAC) or 340 V DC bus (240 VAC) with margin. The 6 Ω RDS(on) limits efficiency to about 75-80% at full load, but this is acceptable for always-on standby rails where cost and simplicity dominate. Add an RCD snubber to manage avalanche energy during mains transients.
Recommended
Sensor Signal Multiplexer and Switch Matrix
The BSP89H6327XTSA1's low on-resistance variation with VGS (in the saturated region) and 240 V rating make it a viable analog signal multiplexer for high-voltage sensor matrices in test-and-measurement equipment and data-acquisition systems. Its low gate charge minimizes charge injection into the signal path (<10 pC typical), preserving measurement accuracy when switching between high-impedance sensor sources. Use it in a 4:1 or 8:1 mux tree with the BSP297H6327XTSA1 for complementary low-voltage channels.
Recommended
Battery Management Isolator Switch
In 12 V/24 V/48 V battery management systems (BMS), the BSP89H6327XTSA1 acts as a low-side disconnect switch for individual cell monitoring or pack isolation relays. The 240 V breakdown withstands load-dump transients on 12 V automotive buses (per ISO 7637-2) and the inductive kick of contactor coils. AEC-Q101 qualification allows direct use in EV battery-pack PCBs. At 0.35 A it suits signal-level isolation rather than main contactor drive - pair with a larger Infineon IGBT or SiC MOSFET for the main contactor.
Recommended
Recommended Products Summary
Engineering reference data for BSP89H6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSP88H6327XTSA1 | BSR316PH6327XTSA1 | BSP762TXUMA1 | BSP772TXUMA1 |
|---|---|---|---|---|---|
| Package | PG-SOT223-4 | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel (smart switch) |
| V(BR)DSS | 240 V | 240 V | 60 V | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current (Ta=25°C) | 0.35 A | 0.35 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) typical | 6 Ω | 6 Ω | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Logic-Level Gate | Yes | Yes | Yes | Yes | Yes (integrated driver) |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Approx. Unit Price (qty 1000) | $0.39 | $0.40 | [DATA_NEEDED] | $0.55 | $0.85 |
Key Differentiators
- Highest VDS rating in the Infineon SOT-223 SIPMOS family (vs BSP297H6327XTSA1)
- Logic-level gate drive eliminates external gate-driver IC (vs IRF520NPBF)
- AEC-Q101 automotive qualification included in standard part (vs BSR316PH6327XTSA1 (P-Channel complement))
Design Notes
Estimated: at ID=0.35 A and RDS(on)=6 Ω, the conduction loss is P=I²R ≈ 0.74 W. Combined with switching losses in a 24 V/1 kHz application, total dissipation typically reaches 1.0-1.2 W. The Infineon datasheet specifies RthJA=70 K/W on a 6 cm² copper pour (RthJS=25 K/W to the tab). To stay below a 100 K junction rise at 25 °C ambient, attach the SOT-223 tab to a copper pour of at least 6 cm² with multiple thermal vias to the inner layers. Inadequate copper area is the #1 cause of field failures in this part family.
Place a 100 kΩ gate-to-source pull-down resistor directly at the gate pin to ensure the MOSFET stays off during MCU reset and power-up glitches. Add a 10 Ω-100 Ω gate series resistor to damp the gate-source LC resonance and slow the switching edge - this reduces EMI on long gate traces and prevents spurious turn-on from dv/dt coupling through Cgd. Keep the gate trace short and away from the drain trace to minimize parasitic feedback that can cause oscillation in high-side configurations.
Do not exceed the 240 V VDS rating, including inductive flyback spikes - always add a flyback diode or TVS clamp across inductive loads such as relays and solenoids. The 'logic-level' gate drive requires VGS to fully exceed VGS(th) plus margin; if the MCU GPIO is only 2.5 V and VGS(th) is 2.0 V, the part may operate in the linear region with high RDS(on). Verify VGS(th) from the datasheet and ensure your logic high is at least 3.0 V for full enhancement at 0.35 A.
Compliance Information
AEC-Q101 (automotive) qualified per the H6327 ordering suffix. RoHS and REACH compliant per Infineon product declaration. Halogen-free status not explicitly listed in the provided web data - marked unknown pending datasheet verification.
