BSP89H6327XTSA1 vs BSP125H6433XTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP89H6327XTSA1 sa pamamagitan ng Infineon at BSP125H6433XTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP89H6327XTSA1 BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 ✓ Nakahanda
Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP89H6327XTSA1 BSP125H6433XTMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET, enhancement mode —
Technology SIPMOS (planar power MOS) —
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 µA) —
Continuous Drain Current (ID) at Ta=25°C 0.35 A —
Total Power Dissipation (Ptot) at Ta=25°C 1.8 W (on FR4 PCB, 6 cm² cooling area) —
On-State Resistance (RDS(on)) max 6 Ω (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical and min/max]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (Tj) -55C to +150C (TJ)
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cm² PCB) —
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W —
Packhaging PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT223-4 (3+tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) —
dv/dt Rated Yes —
ESD Protection Internal gate-source Zener —
Automotive Qualification AEC-Q101 (per ordering code H6327) AEC-Q101
Tindminan RoHS Compliant Compliant
FET Type — N-Channel Enhancement Mode
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (ID) at TA — 120 mA
Power Dissipation (PD) at TA — 1.8 W
Lead Plating — Pb-free
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA on standard PCB]
Configuration — Single N-Channel MOSFET

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