BSR802NL6327HTSA1 vs IRLML2060TRPBF Comparison
Detailed side-by-side comparison of BSR802NL6327HTSA1 by Infineon and IRLML2060TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSR802NL6327HTSA1
BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon
BSR802NL6327HTSA1 β Active
Specification Comparison
| Parameter | BSR802NL6327HTSA1 | IRLML2060TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $0.13 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSR802NL6327HTSA1 | β |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | IR HEXFET (Trench Gate) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 20 V | β |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | β |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | β |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.8 V typical |
| Package | PG-SC59-3 (SC-59 / SOT-346) | SOT-23 (Micro3, 3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +150C | -55C to +150C |
| Qualification | Automotive | β |
| RoHS Status | Compliant | Compliant |
| Pin Count | 3 | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 1.2 A |
| Pulsed Drain Current (IDM) | β | 4.8 A |
| Gate-to-Source Voltage (VGS) max | β | +/- 12 V |
| RDS(on) max at VGS=10V | β | 480 mOhm |
| RDS(on) max at VGS=4.5V | β | 650 mOhm (typical 580 mOhm) |
| Power Dissipation (PD) at TA=25C | β | 1.25 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | β | 100 C/W |
| Halogen-Free | β | Yes |
| MSL Level | β | MSL1 |