BSR802NL6327HTSA1 vs IRLML2060TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSR802NL6327HTSA1 sa pamamagitan ng Infineon at IRLML2060TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon
BSR802NL6327HTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSR802NL6327HTSA1 | IRLML2060TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSR802NL6327HTSA1 | — |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | IR HEXFET (Trench Gate) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.8 V typical |
| Packhaging | PG-SC59-3 (SC-59 / SOT-346) | SOT-23 (Micro3, 3-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55C to +150C | -55C to +150C |
| Qualification | Automotive | — |
| Tindminan RoHS | Compliant | Compliant |
| Bilang ng Pin | 3 | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| Pulsed Drain Current (IDM) | — | 4.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 12 V |
| RDS(on) max at VGS=10V | — | 480 mOhm |
| RDS(on) max at VGS=4.5V | — | 650 mOhm (typical 580 mOhm) |
| Power Dissipation (PD) at TA=25C | — | 1.25 W |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | — | 100 C/W |
| Wala sa Halogen | — | Yes |
| Level ng MSL | — | MSL1 |