BSS806NH6327XTSA1 vs BSP149H6327XTSA1 Comparison
Detailed side-by-side comparison of BSS806NH6327XTSA1 by Infineon and BSP149H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
BSS806NH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS806NH6327XTSA1 | BSP149H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.19 | $0.60 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 2 (trench MOSFET) | SIPMOS |
| Drain-Source Voltage (VDS) | 20 V | β |
| Continuous Drain Current (ID, Ta) | 2.3 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) | β |
| Gate Drive (recommended VGS) | 1.8 V to 10 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| Power Dissipation (PD, Ta) | 500 mW | β |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Package | PG-SOT23-3 (SOT-23-3) | PG-SOT223-4 (SOT-223-4) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Transistor Polarity | β | N-Channel |
| Mode of Operation | β | Depletion Mode (normally ON) |
| Drain-Source Voltage VDS | β | 200 V |
| Continuous Drain Current ID | β | 660 mA (Ta) |
| Power Dissipation PD | β | 1.8 W (Ta) |
| On-State Resistance RDS(on) | β | 1 ohm (typ) |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: max VGS rating] |
| Operating Temperature | β | -55 C to +150 C (Tj) |
| Channel Count | β | 1 |
| Pin Count | β | 4 (G, D, S, tab) |
| Configuration | β | Single |