BSS806NH6327XTSA1 vs BSP149H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS806NH6327XTSA1 von Infineon und BSP149H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS806NH6327XTSA1 | BSP149H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,19 | $0,60 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 2 (trench MOSFET) | SIPMOS |
| Drain-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID, Ta) | 2.3 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) | — |
| Gate Drive (recommended VGS) | 1.8 V to 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Power Dissipation (PD, Ta) | 500 mW | — |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | — |
| Gehäuse | PG-SOT23-3 (SOT-23-3) | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant (Pb-free plating) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Transistor Polarity | — | N-Channel |
| Mode of Operation | — | Depletion Mode (normally ON) |
| Drain-Source Voltage VDS | — | 200 V |
| Continuous Drain Current ID | — | 660 mA (Ta) |
| Power Dissipation PD | — | 1.8 W (Ta) |
| On-State Resistance RDS(on) | — | 1 ohm (typ) |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: max VGS rating] |
| Betriebstemperatur | — | -55 C to +150 C (Tj) |
| Channel Count | — | 1 |
| Pin-Anzahl | — | 4 (G, D, S, tab) |
| Configuration | — | Single |