BSZ011NE2LS5IATMA1 vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Operating Temperature Range | -55°C to +150°C | -55C to +150C (TJ) |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series / Family | — | OptiMOS 25V |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| Pin Count | — | 8 |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |