BSZ011NE2LS5IATMA1 vs BSC010NE2LSIATMA1 Vergleich

Detaillierter Direktvergleich von BSZ011NE2LS5IATMA1 von Infineon und BSC010NE2LSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSZ011NE2LS5IATMA1 BSC010NE2LSIATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,55 $0,92
FET Type N-Channel —
Technology OptiMOS 5 (Trench) OptiMOS (Trench)
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25°C 35 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΩ (typical, per datasheet title) —
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 69 W —
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V) —
Gate Drive Voltage (recommended) 4.5 V to 10 V —
Betriebstemperaturbereich -55°C to +150°C -55C to +150C (TJ)
Gehäuse PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) PG-TDSON-8-7 (TDSON-8 EP)
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS-Status Compliant Compliant
Lead-Free Yes —
Halogenfrei Yes —
Manufacturer — Infineon Technologies
Series / Family — OptiMOS 25V
Transistortyp — N-Channel MOSFET
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Pin-Anzahl — 8
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

Datenblätter & Ressourcen

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