BSZ017NE2LS5IATMA1 vs BSC097N06NSATMA1 Comparison
Detailed side-by-side comparison of BSZ017NE2LS5IATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β Active
Specification Comparison
| Parameter | BSZ017NE2LS5IATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.64 | $0.38 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (TA) | 27 A | β |
| Continuous Drain Current (TC) | 40 A | β |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΞ© | β |
| On-Resistance Test Current | 20 A | β |
| Gate-Source Voltage (VGS) Rating | Β±16 V | β |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 Β΅A | β |
| Total Gate Charge Qg | 30 nC @ VGS=10V | β |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | β |
| Power Dissipation (TA) | 2.1 W | β |
| Power Dissipation (TC) | 50 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | -55C to +150C |
| Package | PG-TSDSON-8-FL (8-PowerTDFN) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Part Status | β | Active |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 46 A |
| Continuous Drain Current (ID) at Ta=25C | β | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | β | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 36 W |
| Package / Case | β | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Technology | β | OptiMOS 5 (Trench) |
| MSL Level | β | 1 (Unlimited) |
| Avalanche Rated | β | Yes (EAS per datasheet) |