BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8
MPN: BSZ017NE2LS5IATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.64 | $640.00 |
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View Datasheet →BSZ017NE2LS5IATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (TA) | 27 A |
| Continuous Drain Current (TC) | 40 A |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ |
| On-Resistance Test Current | 20 A |
| Gate-Source Voltage (VGS) Rating | ±16 V |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA |
| Total Gate Charge Qg | 30 nC @ VGS=10V |
| Input Capacitance Ciss | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | 2.1 W |
| Power Dissipation (TC) | 50 W |
| Operating Junction Temperature | -55°C to +150°C |
| Package | PG-TSDSON-8-FL (8-PowerTDFN) |
| Mounting Type | Surface Mount |
| Series / Family | OptiMOS 5 25V |
| RoHS Status | Compliant |
BSZ017NE2LS5IATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; ±16V VGS absolute max |
| Pin 2 | Source — Source connection, internally bonded to pins 3 and 8 |
| Pin 3 | Source — Source connection |
| Pin 4 | Drain — Drain connection (electrically common with exposed pad) |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC)
Typical Applications
BSZ017NE2LS5IATMA1 is suitable for 7 applications: Synchronous Buck DC-DC Converters, USB Power Delivery (PD) Fast Chargers, Hot-Swap and OR-ing Controllers (12V/20V Rails), Battery Protection (1S-3S Lithium-Ion Packs), BLDC Motor Drive Half-Bridges (Robotics, E-Bikes), Class-D Audio Amplifier Output Stages, E-Fuse and Inrush Current Limiters.
Synchronous Buck DC-DC Converters
The BSZ017NE2LS5IATMA1 excels as the low-side synchronous rectifier in 12V-input buck converters delivering 20-40A to point-of-load rails. Its 1.7 mΩ RDS(on) at VGS=10V keeps conduction losses under 1W at full load, supporting >97% peak efficiency at 500 kHz switching. The 2000 pF Ciss and 30 nC Qg permit fast transition times with a low-side gate driver such as the 1EDN7511B, and the TSDSON-8 exposed pad enables direct PCB heatsinking.
Recommended
USB Power Delivery (PD) Fast Chargers
In 65W-100W USB PD3.0/3.1 chargers, the BSZ017NE2LS5IATMA1 serves as the primary-side synchronous FET in active-clamp flyback or as the secondary-side synchronous rectifier. Its 25V VDS rating covers 20V EPR outputs with margin, and the 1.7 mΩ on-resistance minimizes secondary-side conduction loss — critical for meeting the 92-94% efficiency targets of CoC Tier-2 and DoE Level-VI charger standards. The small TSDSON-8 footprint also enables 30W/in³ power density.
Recommended
Hot-Swap and OR-ing Controllers (12V/20V Rails)
The BSZ017NE2LS5IATMA1 is ideal for 12V and 20V hot-swap and OR-ing applications in server and telecom distribution. Its 27A continuous (TA) and 40A (TC) current ratings comfortably handle 240-400W load steps, while the 1.7 mΩ RDS(on) limits steady-state voltage drop to 34 mV at 20A — well below the 50 mV OR-ing tolerance of typical redundant supply designs. Combined with a hot-swap controller like BTS70081EPA, it provides inrush current limiting and reverse-current blocking.
Recommended
Battery Protection (1S-3S Lithium-Ion Packs)
For 1S-3S lithium-ion battery packs (3.7V-12.6V nominal, 16.8V peak), the BSZ017NE2LS5IATMA1 functions as the low-side protection FET in standard PCM/BMS circuits. Its 1.7 mΩ RDS(on) at full charge/discharge currents of 20-30A contributes only 35-50 mV drop per FET, preserving usable battery capacity. The 25V VDS rating far exceeds the 12.6V pack voltage, providing ample margin for transient overvoltages, and the ±16V VGS tolerance survives common-mode ESD events at the pack terminals.
Recommended
BLDC Motor Drive Half-Bridges (Robotics, E-Bikes)
In 24V-36V BLDC motor drive half-bridges for robotics, drones, and e-bikes, the BSZ017NE2LS5IATMA1 pairs with its 60V/100V siblings as the low-side switch in three-phase inverter stages. Its 40A TC rating supports 1-2 kW continuous motor power, while the 30 nC gate charge enables PWM frequencies up to 50 kHz for silent operation. When used at 24V rails with 50% duty cycle, peak FET dissipation stays below 2W — within the 2.1W TA rating with proper copper heatsinking.
Recommended
Class-D Audio Amplifier Output Stages
In 50-200W Class-D audio amplifiers, the BSZ017NE2LS5IATMA1 serves as the low-side output FET in the H-bridge stage. The ultra-low 1.7 mΩ RDS(on) minimizes crossover distortion and thermal compression at high output currents, while the small TSDSON-8 footprint allows compact 4-layer amplifier layouts. Designers must ensure the 400 kHz PWM switching frequency is well above the audio band, and that gate-drive dead-time is optimized to prevent shoot-through despite the 30 nC gate charge.
Recommended
E-Fuse and Inrush Current Limiters
The BSZ017NE2LS5IATMA1 functions as the main pass element in active e-fuse circuits for 12V/20V backplanes and solid-state circuit breakers. Its 1.7 mΩ RDS(on) provides only 17 mV drop at 10A — far less than traditional PTC fuses — and its 25V VDS rating covers standard bus voltages. Combined with a current-sense amplifier like INA180 and a comparator, designers can build resettable e-fuses with sub-100 µs response time, replacing bulky mechanical or polymeric fuses in industrial and server applications.
Recommended
Recommended Products Summary
Engineering reference data for BSZ017NE2LS5IATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ036NE2LSATMA1 | BSC018N04LSGATMA1 | BSC014N04LSATMA1 | IPB027N10N3GATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 40 V | 40 V | 100 V | 60 V |
| RDS(on) @ VGS=10V (typ) | 1.7 mΩ | 3.6 mΩ | 1.8 mΩ | 1.4 mΩ | 2.7 mΩ | 9.7 mΩ |
| Continuous Drain Current (TA) | 27 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate Charge Qg (typ) | 30 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Series / Family | OptiMOS 5 25V | OptiMOS 5 25V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 3 100V | OptiMOS 5 60V |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +175°C | -55°C to +150°C |
Key Differentiators
- Lowest RDS(on) in Infineon 25V OptiMOS 5 family (vs BSZ036NE2LSATMA1)
- Compact TSDSON-8 footprint vs D2PAK alternatives (vs IRFB7534PBF (TO-220) / DPAK-class competitors)
- OptiMOS 5 generation figure-of-merit improvement (vs IPB027N10N3GATMA1 (OptiMOS 3, 100V class))
Design Notes
Estimated: at ID=20A continuous with RDS(on)=1.7 mΩ, conduction loss is I²R = 20² × 0.0017 = 0.68W. With TSDSON-8 θJA ≈ 50°C/W on a 1 oz 1-square-inch copper pour, junction temperature rise above ambient is approximately 34°C — well within the 150°C absolute maximum. For 40A pulsed operation (1 ms duty), peak power is 2.7W and the junction temperature must be calculated against the thermal impedance curve; do not exceed 5W instantaneous dissipation.
The PG-TSDSON-8-FL exposed pad must be soldered to a contiguous copper pour covering at least 50 mm² on top and bottom layers, stitched with thermal vias (0.3 mm pitch, 0.2 mm drill, plated and filled) for optimal heat extraction. Place the gate-drive resistor within 2 mm of pin 1 to suppress parasitic turn-on from drain-gate capacitance (Miller effect). Maintain a minimum 0.2 mm clearance between the drain copper and signal traces.
Do not exceed VGS=±16V absolute maximum — gate-oxide stress accelerates degradation. Always operate VGS between 8V and 12V for optimum RDS(on) without oxide risk. Avoid paralleling multiple BSZ017NE2LS5IATMA1 FETs without individual gate-source resistors (10-100Ω) to prevent high-frequency oscillation. The 2V gate threshold is NOT a logic-level guarantee — confirm full enhancement with VGS≥8V at the lowest expected operating temperature.
Compliance Information
RoHS compliant per Infineon product page and JLCPCB listing. Standard grade - not AEC-Q100 qualified; for automotive applications, contact Infineon for Q1-grade variants.
