BSZ018NE2LSIATMA1 vs BSZ150N10LS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ018NE2LSIATMA1 by Infineon and BSZ150N10LS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveInfineon
BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
BSZ150N10LS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ018NE2LSIATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | BSZ150N10LS3GATMA1 |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | 160 A | β |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 69 W | β |
| Operating Temperature Range | -55 C to +150 C | β |
| Package | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Technology / Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25 Β°C) | β | 40 A |
| On-Resistance RDS(on) max | β | 15 mΞ© |
| Power Dissipation (TA=25 Β°C) | β | 2.1 W |
| Power Dissipation (TC=25 Β°C) | β | 63 W |
| Operating Temperature Range (TJ) | β | -55 Β°C to +150 Β°C |
| Gate Threshold VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | β | Yes (lead-free, 260 Β°C peak reflow compatible) |
| MSL Level | β | [DATA_NEEDED: MSL moisture sensitivity level] |