BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSZ150N10LS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
| 5,000 | $0.65 | $3,250.00 |
Drop-in alternatives for BSZ150N10LS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSZ150N10LS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 |
| Technology / Family | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A |
| On-Resistance RDS(on) max | 15 mΩ |
| Power Dissipation (TA=25 °C) | 2.1 W |
| Power Dissipation (TC=25 °C) | 63 W |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C |
| RoHS Status | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) |
BSZ150N10LS3GATMA1 Pin Configuration
| Pin 1 | S — Source (connected to source pad) |
| Pin 2 | S — Source (connected to source pad) |
| Pin 3 | S — Source (connected to source pad) |
| Pin 4 | G — Gate |
| Pin 5 | S — Source (connected to source pad) |
| Pin 6 | S — Source (connected to source pad) |
| Pin 7 | S — Source (connected to source pad) |
| Pin 8 | D — Drain (exposed pad on bottom of package) |
Safe Operating Area (DC, TJ=150 °C)
Typical Applications
BSZ150N10LS3GATMA1 is suitable for 6 applications: 48 V Synchronous Rectifier, Motor Drive H-Bridge (24 V / 48 V), Hot-Swap / e-Fuse Controller Switch, Class-D Audio Amplifier Output Stage, Battery Management / Protection FET, Industrial 24 V/36 V DC/DC Converter.
48 V Synchronous Rectifier
The BSZ150N10LS3GATMA1 is well suited to 48 V secondary-side synchronous-rectifier stages in telecom and server SMPS, where its 100 V VDS rating provides comfortable headroom above 48 V plus inductive spikes, and its 15 mΩ maximum RDS(on) keeps conduction loss at 24 W at 40 A full load. Placed as the low-side MOSFET in a buck-derived half-bridge driven by an Infineon EiceDRIVER gate IC, the part delivers sub-100 ns switching transitions thanks to the OptiMOS 3 cell geometry. The PG-TSDSON-8 package keeps the power loop inductance low, reducing overshoot and EMI compared with larger SO-8 parts. The 63 W TC power dissipation figure allows continuous 20–25 A operation with proper PCB copper, which is the typical operating point of a 48 V-to-PoL intermediate bus converter.
Recommended
Motor Drive H-Bridge (24 V / 48 V)
The BSZ150N10LS3GATMA1 works as the low-side switch in 24 V or 48 V brushed-DC and PMSM motor H-bridges, where its 100 V rating tolerates regen transients and the 40 A continuous current supports motors in the 200–500 W mechanical output range. Its 15 mΩ RDS(on) minimizes conduction loss at high duty cycle, extending battery runtime in cordless tools and e-mobility platforms. The PG-TSDSON-8 footprint enables compact four-MOSFET bridges in roughly 80 mm² of board area, which is critical for handheld power tools. The exposed drain pad couples directly to inner-layer copper for sustained 20 A continuous operation without an external heatsink.
Recommended
Hot-Swap / e-Fuse Controller Switch
The BSZ150N10LS3GATMA1 functions as the pass/ProtectFET in 48 V hot-swap and electronic fuse circuits, where its 100 V VDS handles standard telecom bus voltages with margin and its 15 mΩ RDS(on) limits steady-state voltage drop to about 75 mV at 5 A. The 40 A pulsed current capability absorbs inrush transients when bulk capacitors charge. The PG-TSDSON-8 footprint allows a compact 3.3 x 3.3 mm solution that fits on SMD adapter cards and high-availability server backplanes. Designers should add a TVS clamp or active gate slew-rate control to keep VDS within the 100 V rating during hot-plug events.
Recommended
Class-D Audio Amplifier Output Stage
The BSZ150N10LS3GATMA1 is well matched to the output half-bridge of sub-100 V Class-D audio amplifiers, where its 15 mΩ RDS(on) and 40 A peak current deliver high efficiency (>90%) and low THD+N at 200–400 W output. The PG-TSDSON-8 package minimizes switching-loop inductance, which is critical for clean PWM edges and reduced EMI in audio-band applications. The exposed drain pad enables direct PCB heatsinking so the amplifier can deliver continuous power without an external heatsink. Designers should pair this part with a dedicated Class-D gate driver such as the IRS2092 family for self-oscillating or PWM-modulated topologies.
Recommended
Battery Management / Protection FET
The BSZ150N10LS3GATMA1 acts as the low-side protection FET in 48 V lithium-ion battery packs for e-bikes, light EVs, and stationary storage, where its 100 V VDS handles pack transients and its 15 mΩ RDS(on) limits continuous discharge loss to about 0.5% at 30 A. The 40 A current rating matches mid-power pack architectures in the 1–3 kWh range. The PG-TSDSON-8 footprint allows a compact BMS PCB layout with minimal trace resistance, critical for accurate coulomb counting. The part is specified for -55 °C to +150 °C junction, covering the full automotive and industrial temperature range.
Recommended
Industrial 24 V/36 V DC/DC Converter
The BSZ150N10LS3GATMA1 is ideal for industrial 24 V and 36 V bus DC/DC converters used in factory automation, robotics, and process control, where its 100 V VDS easily tolerates the 36 V nominal bus plus 50% transient over-voltage events defined in IEC 61131-2. The 15 mΩ RDS(on) and 40 A rating enable single-MOSFET synchronous stages at the 300–500 W power level. The PG-TSDSON-8 footprint allows a highly compact solution suitable for DIN-rail mounted power supplies where PCB area is at a premium. The exposed drain pad couples directly to a topside copper pour for natural convection cooling, eliminating the need for an external heatsink in most configurations.
Recommended
Recommended Products Summary
Engineering reference data for BSZ150N10LS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ150N10LS3-G | BSZ160N10NS3GATMA1 | BSC100N10NSFGATMA1 | BSC123N08NS3GATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) - same |
| Technology / Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
| Drain-Source Voltage VDS | 100 V | 100 V | 100 V | 100 V | 80 V | 80 V |
| Continuous Drain Current ID (TC=25 °C) | 40 A | 40 A | 40 A | 40 A | 40 A | 40 A |
| On-Resistance RDS(on) max | 15 mΩ | 15 mΩ | 16 mΩ | 10 mΩ | 12.3 mΩ | 11 mΩ |
| Power Dissipation (TA=25 °C) | 2.1 W | 2.1 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature (TJ) | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C |
Key Differentiators
- Lowest RDS(on) in its 100 V / PG-TSDSON-8 class (vs BSZ160N10NS3GATMA1)
- Higher voltage headroom than 80 V OptiMOS 5 parts (vs BSZ110N08NS5ATMA1)
- Mature OptiMOS 3 process with broad tooling support (vs BSC100N10NSFGATMA1 (OptiMOS 5))
Design Notes
The 2.1 W TA dissipation rating assumes a 4-layer FR4 PCB with at least 1 oz copper and 1 square inch of drain-pad copper area. Estimated: at 1 W dissipation and a 50 °C ambient, the junction temperature rise above ambient is roughly RthJA * Pdiss, where RthJA is approximately 60 °C/W on a JEDEC EIA/JESD51 1-square-inch test board. For continuous 10+ A operation, extend the drain copper to multiple square inches and add thermal vias to inner layers. Without proper copper, the part will throttle or fail in a few minutes at full current.
Use a PG-TSDSON-8 land pattern that exposes the drain pad to a copper pour as large as thermal constraints allow. Stitch the exposed pad with a 3x3 array of 0.3 mm thermal vias to inner-layer copper. Keep the gate loop (gate driver output → gate resistor → gate pin → source pin → gate driver ground) under 5 mm total length to avoid gate ringing. The source pins should share a low-inductance connection to the gate-driver ground return, NOT the system power ground.
Do not assume the part can switch at full 40 A continuously at TA=25 °C — the 40 A rating is at TC=25 °C, which requires substantial copper. At TA=85 °C the continuous current derates to about 15 A on a typical 1-square-inch copper pour. Also avoid operating VGS above ±20 V absolute maximum; use a gate-source Zener or dedicated gate-driver clamp if the gate is exposed to high dV/dt transients. Finally, do not connect the gate to a high-impedance node when not driven, as the part can partially turn on from leakage and cause shoot-through.
Compliance Information
RoHS and lead-free confirmed per Infineon product page and DigiKey listing. AEC-Q100 automotive qualification status was not confirmed in the verified web data — engineers should check the Infineon automotive-grade BSZ150N10LS3G variant if automotive qualification is required.
