BSZ018NE2LSIATMA1 vs BSZ150N10LS3GATMA1 비교
다음의 상세 나란히 비교: BSZ018NE2LSIATMA1 제조: Infineon 및 BSZ150N10LS3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSZ018NE2LSIATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.39 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | BSZ150N10LS3GATMA1 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| 동작 온도 범위 | -55 C to +150 C | — |
| 패키지 | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology / Family | — | OptiMOS 3 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25 °C) | — | 40 A |
| On-Resistance RDS(on) max | — | 15 mΩ |
| Power Dissipation (TA=25 °C) | — | 2.1 W |
| 전력 손실 (TC=25°C) | — | 63 W |
| Operating Temperature Range (TJ) | — | -55 °C to +150 °C |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | — | Yes (lead-free, 260 °C peak reflow compatible) |
| MSL 레벨 | — | [DATA_NEEDED: MSL moisture sensitivity level] |