BSZ060NE2LSATMA1 vs IAUC120N06S5L032ATMA1 Comparison
Detailed side-by-side comparison of BSZ060NE2LSATMA1 by Infineon and IAUC120N06S5L032ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
BSZ060NE2LSATMA1 β ActiveInfineon
IAUC120N06S5L032ATMA1
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ060NE2LSATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.27 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | β |
| Technology | OptiMOSβ’ (N-Channel Trench MOSFET) | OptiMOS 5 Trench |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | β |
| Pulsed Drain Current (IDM) | 44 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 26 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +175 C (T_j) |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-34 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Shipping Packaging | Tape & Reel | β |
| Product Family | β | OptiMOS 5 (60 V) |
| Transistor Type | β | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, T_j) | β | 120 A |
| R_DS(on) Max (V_GS = 10 V) | β | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | β | 94 W |
| AEC-Q101 Qualified | β | Yes |
| Gate Threshold Voltage V_GS(th) | β | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | β | [DATA_NEEDED: Q_G total at V_GS=10V] |