BSZ060NE2LSATMA1 vs IAUC120N06S5L032ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ060NE2LSATMA1 dari Infineon dan IAUC120N06S5L032ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSZ060NE2LSATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | — |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) | OptiMOS 5 Trench |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 44 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 26 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55 C to +175 C (T_j) |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-34 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Shipping Packaging | Tape & Reel | — |
| Product Family | — | OptiMOS 5 (60 V) |
| Tipe Transistor | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| AEC-Q101 Qualified | — | Yes |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |