BSZ070N08LS5ATMA1 vs ISC0802NLSATMA1 Comparison
Detailed side-by-side comparison of BSZ070N08LS5ATMA1 by Infineon and ISC0802NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΞ© OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 β ActiveInfineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveSpecification Comparison
| Parameter | BSZ070N08LS5ATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOSβ’ 5 (80 V logic-level) | β |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | β |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | β |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΞ© | β |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | β |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | β |
| Power Dissition PD max at TC | 69 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020, unleaded reflow) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Reel Quantity | 5000 per 13-inch reel (T&R) | β |
| Series | β | OptiMOS 5 |
| Part Number | β | ISC0802NLSATMA1 |
| FET Type | β | N-Channel |
| Technology | β | OptiMOS 5 (Power MOSFET) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 150 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| RDS(on) max at VGS=10V | β | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | β | 2.5 W |
| Power Dissipation (Pd) at Tc | β | 125 W |
| Operating Temperature Range | β | -55 C to +175 C |