BSZ0901NSIATMA1 vs BSZ017NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.64 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ0901NSIATMA1 | β |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | β |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Continuous Drain Current (TA) | β | 27 A |
| Continuous Drain Current (TC) | β | 40 A |
| On-Resistance RDS(on) @ VGS=10V | β | 1.7 mΞ© |
| On-Resistance Test Current | β | 20 A |
| Gate-Source Voltage (VGS) Rating | β | Β±16 V |
| Gate Threshold Voltage VGS(th) | β | 2 V @ 250 Β΅A |
| Total Gate Charge Qg | β | 30 nC @ VGS=10V |
| Input Capacitance Ciss | β | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | β | 2.1 W |
| Power Dissipation (TC) | β | 50 W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Series / Family | β | OptiMOS 5 25V |