BSZ0901NSIATMA1 vs BSZ017NE2LS5IATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ0901NSIATMA1 sa pamamagitan ng Infineon at BSZ017NE2LS5IATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSZ0901NSIATMA1 | BSZ017NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Packhaging | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (8-PowerTDFN) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (typical MOSFET range) | — |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Tindminan RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (TA) | — | 27 A |
| Continuous Drain Current (TC) | — | 40 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.7 mΩ |
| On-Resistance Test Current | — | 20 A |
| Gate-Source Voltage (VGS) Rating | — | ±16 V |
| Gate Threshold Voltage VGS(th) | — | 2 V @ 250 µA |
| Total Gate Charge Qg | — | 30 nC @ VGS=10V |
| Input Capacitance Ciss | — | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 50 W |
| Temperature ng Junction na Operasyon | — | -55°C to +150°C |
| Series / Family | — | OptiMOS 5 25V |