IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252
MPN: IPD70N10S312ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.31 | $131.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
Drop-in alternatives for IPD70N10S312ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD082N10N3GATMA1
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IPD110N12N3GATMA1
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BSZ096N10LS5ATMA1
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View Datasheet →BSZ0901NSATMA1
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IPD90N06S407ATMA2
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View Datasheet →IPD70N10S312ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IPD70N10S312ATMA1 |
| Product Family | OptiMOS-T Power-Transistor |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A |
| Pulsed Drain Current (IDM) | 180 A |
| Power Dissipation (PD, Tc) | 125 W |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | 65 nC @ 10 V |
| Operating Temperature (TJ) | -55 °C to +175 °C |
| Package | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100 % (per datasheet) |
| RoHS Compliance | Green product, RoHS compliant |
IPD70N10S312ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; apply 10 V for full enhancement, never exceed +/-20 V VGS |
| Pin 2 | Source (S) — Source terminal; connect to circuit return / GND for low-side switch configuration |
| Pin 3 | Source (S) — Source terminal (electrically common with pin 2); PCB layout flexibility |
| Pin Tab | Drain (D) — Drain terminal; also primary thermal path - solder to PCB copper pour |
Safe Operating Area (SOA) - IPD70N10S312ATMA1
Typical Applications
IPD70N10S312ATMA1 is suitable for 7 applications: 12 V / 24 V Automotive ECU Load Switching, DC-DC Converter Switching Stage, Motor-Drive H-Bridge Half-Bridge Switch, Industrial Solenoid / Relay Driver, Hot-Swap / Inrush-Current Limiter, Battery-Protection Disconnect Switch, LED Headlight Driver Switch.
12 V / 24 V Automotive ECU Load Switching
The IPD70N10S312ATMA1's 100 V VDS rating provides substantial headroom above 24 V automotive bus voltages, where load-dump transients can reach 35-40 V. The device's 70 A continuous drain current at Tc and 180 A pulsed rating suit high-current solenoid and relay drivers inside ECUs - electric power steering (EPS), electronic stability control (ESC), and transmission solenoids. Its 11.1 mΩ RDS(on) at 10 V VGS minimises conduction loss in always-on paths, reducing fuel consumption in parasitic-load-sensitive subsystems. AEC-Q101 qualification and 175 °C max junction temperature confirm under-hood reliability.
Recommended
DC-DC Converter Switching Stage
In a 12 V-to-3.3 V buck converter or 24 V-to-12 V intermediate bus, the IPD70N10S312ATMA1 serves as the main switching element. Its 11.1 mΩ RDS(on) keeps conduction loss under 1 W at typical 30 A load currents, while the 65 nC total gate charge keeps gate-drive loss modest at 100-200 kHz switching frequencies. The 100 V VDS rating provides ample margin for ringing on the switch-node of a 24 V input buck converter. Compared to a discrete IGBT, this MOSFET offers much faster switching (sub-50 ns) and no tail current, enabling higher-frequency operation and smaller magnetic components.
Recommended
Motor-Drive H-Bridge Half-Bridge Switch
In an H-bridge motor drive, two IPD70N10S312ATMA1 MOSFETs form each half-bridge leg, switching the motor phase between supply and ground at 20-50 kHz PWM. The 70 A continuous current supports small DC and BLDC motors in pumps, fans, and seat adjusters, while the 180 A pulsed rating handles motor-startup inrush currents. The 100 V VDS gives comfortable margin above the typical 12 V or 24 V motor supply rail. The AEC-Q101 grade and 175 °C junction rating ensure long-term reliability under the thermal-cycling stresses typical of motor-drive duty.
Recommended
Industrial Solenoid / Relay Driver
Industrial solenoid valves, hydraulic relays, and pneumatic actuators require a low-side switch capable of handling 30-50 A inductive load currents. The IPD70N10S312ATMA1's 11.1 mΩ RDS(on) keeps dissipation below 30 W at 50 A, manageable in the DPAK footprint with appropriate PCB copper. The 100 % avalanche-tested rating is essential for unclamped inductive turn-off events where the solenoid's stored energy recirculates into the MOSFET body diode. The ±20 V VGS rating tolerates large gate-drive transients from long industrial wiring harnesses.
Recommended
Hot-Swap / Inrush-Current Limiter
In 12 V or 24 V hot-swap controller circuits, the IPD70N10S312ATMA1 acts as the inrush-limiting element when a board is plugged into a live backplane. Its 11.1 mΩ RDS(on) combined with a small sense resistor and gate-dvdt capacitor produces a controlled turn-on ramp. The 70 A continuous rating covers most board-level load currents, while the 100 V VDS rating is conservative for 24 V telecom/datacom rails. The OptiMOS-T linear-mode capability below 5 V VGS allows analog current-limit loops for second-stage protection.
Recommended
Battery-Protection Disconnect Switch
In 12 V lead-acid or 48 V mild-hybrid battery packs, the IPD70N10S312ATMA1 serves as the master disconnect switch. Its 70 A continuous rating handles typical 30-50 A continuous loads (lighting, ignition, infotainment) while the 180 A pulsed rating accommodates cold-crank surge. The 100 V VDS provides margin above 48 V mild-hybrid rails with inductive transients. The 11.1 mΩ RDS(on) minimises parasitic loss in the always-on path. AEC-Q101 qualification is mandatory for automotive battery-pack applications under ISO 26262 functional-safety standards.
Recommended
LED Headlight Driver Switch
In matrix-LED and high-beam automotive headlight driver stages, the IPD70N10S312ATMA1 functions as the buck-converter main switch or high-side LED-current regulator element. The 100 V VDS rating handles the 48 V bus used in newer LED-driver architectures, while the 70 A continuous rating supports multi-string LED arrays drawing 20-40 A total. The 11.1 mΩ RDS(on) keeps conduction loss low in continuous-PWM current-mode regulation, reducing thermal stress in the cramped headlight housing. AEC-Q101 qualification is essential for under-hood thermal-cycling endurance.
Recommended
Recommended Products Summary
Engineering reference data for IPD70N10S312ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD082N10N3GATMA1 | IPD70N10S3-12 | IPD110N12N3GATMA1 | BSZ096N10LS5ATMA1 | IPD90N06S407ATMA2 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 120 V | 100 V | 60 V |
| Continuous Drain Current (ID @ Tc) | 70 A | 82 A | 70 A | 110 A | [DATA_NEEDED] | 90 A |
| RDS(on) @ 10 V VGS | 11.1 mΩ | 8.2 mΩ | 11.1 mΩ | [DATA_NEEDED] | 9.6 mΩ | [DATA_NEEDED] |
| Total Gate Charge (Qg) | 65 nC @ 10 V | [DATA_NEEDED] | 65 nC @ 10 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | [DATA_NEEDED] | 4355 pF @ 25 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| MSL Rating | MSL1 | MSL1 | MSL1 | MSL1 | MSL1 | MSL1 |
| Operating Temperature (TJ max) | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
Key Differentiators
- Established OptiMOS-T platform with 100 % avalanche testing (vs IPD082N10N3GATMA1)
- 100 V VDS provides significant headroom for 24 V bus transients (vs IPD90N06S407ATMA2)
- Drop-in compatible with the same-generation base part IPD70N10S3-12 (vs IPD70N10S3-12)
Design Notes
Estimated: at VGS=10 V and ID=30 A continuous (typical ECU load), the IPD70N10S312ATMA1 dissipates roughly P = ID² × RDS(on) = 30² × 0.0111 = 10 W. With DPAK mounted on 1 square inch of 2 oz copper (theta_JA ≈ 35 °C/W), the junction will rise 350 °C above ambient - exceeding the 175 °C rating. Required: minimum 1.5 square inches of 2 oz copper, or 0.5 square inches with forced-air cooling, or derate continuous current to 20 A at 25 °C ambient. For sustained high-current (>40 A) applications, parallel two devices or migrate to TO-220 / TO-247 packages.
Use the DPAK metal tab as the primary thermal path: in the PCB footprint, allocate at least 35 mm × 35 mm of copper (2 oz) directly under the tab, with thermal vias (0.3 mm diameter, 1 mm pitch) connecting to an inner-plane copper pour. The DPAK pin-1 (gate) trace must be kept short and routed away from the drain tab to minimise parasitic gate-drain capacitance coupling, which can cause Miller-induced false turn-on in half-bridge layouts. Place a 100 kΩ pull-down resistor between gate and source on the PCB to ensure the MOSFET stays off during controller reset.
Do not drive the gate above ±20 V - the IPD70N10S312ATMA1 datasheet specifies this absolute maximum. Standard gate-drive of 10 V is recommended; never use logic-level (5 V) drive, as the device will not fully enhance and RDS(on) will rise 3-5×, causing thermal runaway. In half-bridge layouts, add a 10-100 Ω gate-source resistor (in addition to the series gate resistor) to damp parasitic LC ringing and prevent shoot-through. Always check avalanche energy (EAS) budget when switching unclamped inductive loads - the datasheet single-pulse EAS figure must exceed 0.5 × L × I² × 10⁻⁶ J of the load.
Route the high-current drain loop (drain tab → load → source pin → back to source) with the smallest possible loop area. In buck-converter layouts, keep the high-side MOSFET drain loop and low-side MOSFET drain loop physically separated to avoid circulating common-mode noise. Place the gate-driver IC within 5 mm of the MOSFET gate pin to minimise parasitic inductance in the gate-drive loop, which can cause excessive ringing and EMI. Use a 4-layer PCB with a continuous ground plane directly under the MOSFET for best thermal and EMI performance.
Compliance Information
AEC-Q101 automotive qualified (not AEC-Q100 - Q101 is for discrete semiconductors). MSL1 to 260 °C peak reflow. 175 °C max junction. Green product (RoHS compliant) per Infineon product description.
