BSZ0994NSATMA1 vs BSC014NE2LSIATMA1 Comparison

Detailed side-by-side comparison of BSZ0994NSATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ0994NSATMA1

BSZ0994NSATMA1 - 30V 13A N-Channel OptiMOS 5 MOSFET | Infineon

BSZ0994NSATMA1 βœ“ Active
Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSZ0994NSATMA1 BSC014NE2LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.48
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 30V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID, Ta) 13 A 33 A
Power Dissipation (PD, Ta) 2.1 W β€”
Technology Trench (OptiMOS 5) N-Channel MOSFET (OptiMOS 25V)
Package PG-TSDSON-8-25 (5x6 mm) PG-TDSON-8-7 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Number of Pins 8 β€”
Operating Temperature Range -55C to +150C (junction) β€”
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] β€”
On-Resistance (RDS(on), typ @10V) [DATA_NEEDED: RDS(on) typ @VGS=10V] β€”
Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge Qg] β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Packaging Tape & Reel β€”
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID, Tc) β€” [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) β€” 100 A
On-State Resistance RDS(on) β€” 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 74 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
Lead-Free β€” Yes

Datasheets & Resources

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