BSZ100N03MSGATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of BSZ100N03MSGATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | BSZ100N03MSGATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in body diode | Dual N-Channel (independent MOSFETs) |
| Maximum Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA | 10 A | β |
| Continuous Drain Current (ID) at TC | 40 A | β |
| Power Dissipation (PD) at TA | 2.1 W | β |
| Power Dissipation (PD) at TC | 30 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: Β±20 V typical per datasheet; verify in datasheet] | β |
| Technology | Trench MOSFET (OptiMOS) | Trench MOSFET (OptiMOS 3) |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-TSDSON-8 (5x6 mm) | β |
| Terminal Finish | Tin (Pb-free) | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Qualification | JEDEC - target application qualified | β |
| Avalanche Tested | 100% (per JEDEC) | β |
| RoHS Compliance | Compliant (Pb-free plating) | β |
| Halogen-Free | Yes (per IEC 61249-2-21) | β |
| RDS(on) at VGS=10V (typical) | [DATA_NEEDED: see datasheet Diagram 1] | β |
| Gate Charge Qg (typical) | [DATA_NEEDED: see datasheet] | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |