BSZ100N03MSGATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of BSZ100N03MSGATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | BSZ100N03MSGATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in body diode | Half-Bridge (2 N-Channel) |
| Maximum Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA | 10 A | β |
| Continuous Drain Current (ID) at TC | 40 A | β |
| Power Dissipation (PD) at TA | 2.1 W | β |
| Power Dissipation (PD) at TC | 30 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: Β±20 V typical per datasheet; verify in datasheet] | β |
| Technology | Trench MOSFET (OptiMOS) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-TSDSON-8 (5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Terminal Finish | Tin (Pb-free) | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Qualification | JEDEC - target application qualified | β |
| Avalanche Tested | 100% (per JEDEC) | β |
| RoHS Compliance | Compliant (Pb-free plating) | β |
| Halogen-Free | Yes (per IEC 61249-2-21) | β |
| RDS(on) at VGS=10V (typical) | [DATA_NEEDED: see datasheet Diagram 1] | β |
| Gate Charge Qg (typical) | [DATA_NEEDED: see datasheet] | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Part Series | β | OptiMOS 6 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |
| RoHS Status | β | Compliant |