BSZ100N03MSGATMA1 vs IAUC60N04S6L030HATMA1 对比

详细并排对比 BSZ100N03MSGATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 量产中

规格对比

参数 BSZ100N03MSGATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
晶体管类型 N-Channel MOSFET —
Configuration Single with built-in body diode Half-Bridge (2 N-Channel)
Maximum Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA 10 A —
Continuous Drain Current (ID) at TC 40 A —
Power Dissipation (PD) at TA 2.1 W —
Power Dissipation (PD) at TC 30 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] —
Technology Trench MOSFET (OptiMOS) —
安装类型 Surface Mount Surface Mount
封装 PG-TSDSON-8 (5x6 mm) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Terminal Finish Tin (Pb-free) —
工作温度范围 -55C to +150C (junction) —
Qualification JEDEC - target application qualified —
Avalanche Tested 100% (per JEDEC) —
RoHS Compliance Compliant (Pb-free plating) —
无卤 Yes (per IEC 61249-2-21) —
RDS(on) at VGS=10V (typical) [DATA_NEEDED: see datasheet Diagram 1] —
Gate Charge Qg (typical) [DATA_NEEDED: see datasheet] —
MSL 等级 MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Part Series — OptiMOS 6
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
工作结温 — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)
RoHS 状态 — Compliant

数据手册与资源

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