BSZ900N20NS3GATMA1 vs BSC076N06NS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ900N20NS3GATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ900N20NS3GATMA1
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 β ActiveInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ900N20NS3GATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.65 |
| Part Number | BSZ900N20NS3GATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΞ© | β |
| Typical RDS(on) @ VGS=10V | 77 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD, Tc=25C) | 62.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Package | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (unlimited) |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| ESD Protection | Yes (integrated) | β |
| Avalanche Energy Rated | Yes (EAS) | β |
| Product Family | β | OptiMOS 3 |
| Continuous Drain Current (ID) at TC=25C | β | 50 A |
| On-Resistance RDS(on) max at VGS=10V | β | 7.6 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | β | 10.4 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |
| Operating Temperature Range | β | -55C to +150C |
| RoHS Compliance | β | Compliant |
| Halogen-Free | β | Yes (per Infineon product page) |